机译:电荷歧化触发FESB_(2-X)SN_XSE_4铁磁半导体中的双极掺杂,使温度诱导的Lifshitz过渡
Univ Michigan Dept Mat Sci & Engn LE3M Ann Arbor MI 48109 USA;
Univ Michigan Dept Mat Sci & Engn LE3M Ann Arbor MI 48109 USA;
Univ Michigan Dept Mat Sci & Engn LE3M Ann Arbor MI 48109 USA;
Univ Michigan Dept Mat Sci & Engn LE3M Ann Arbor MI 48109 USA;
Univ Michigan Dept Phys Ann Arbor MI 48109 USA;
Univ Michigan Dept Phys Ann Arbor MI 48109 USA;
Univ Michigan Dept Mat Sci & Engn LE3M Ann Arbor MI 48109 USA|Governors State Univ Div Sci Math & Technol University Pk IL 60484 USA;
Univ Michigan Dept Phys Ann Arbor MI 48109 USA;
Univ Michigan Dept Mat Sci & Engn LE3M Ann Arbor MI 48109 USA;
机译:电荷歧化会触发FeSb_(2-x)Sn_xSe_4铁磁半导体中的双极掺杂,从而实现温度诱导的Lifshitz跃迁
机译:相关FeSb_(2-x)Te_x在半导体-金属转变时的不变热功率增强
机译:自旋和电荷掺杂解耦的新型稀释铁磁半导体的研究进展:铁基超导体的对立面
机译:过渡金属离子掺杂稀释磁半导体的磁性和传输性能{sub}(2-x)tm {sub} xo {sub} 3(Tm = Cr,Mn,Fe,V)
机译:稀土锰酸盐的研究:(1)掺杂诱导从铁磁性导电到La(1-x)Ca(x)mnO(3)中电荷有序绝缘状态的过渡。 (2)场依赖性低温比稀土锰矿床
机译:Li(CdMn)P:具有独立自旋和电荷掺杂的新型基于镉的稀释铁磁半导体
机译:电荷歧化触发FESB2XSNXSE4铁磁半导体的双极掺杂,使温度诱导的Lifshitz过渡