首页> 外文期刊>Journal of the American Chemical Society >Modular Design via Multiple Anion Chemistry of the High Mobility van der Waals Semiconductor Bi_4O_4SeCI_2
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Modular Design via Multiple Anion Chemistry of the High Mobility van der Waals Semiconductor Bi_4O_4SeCI_2

机译:高迁移率范德华半导体Bi_4O_4SeCI_2多阴离子化学的模块化设计

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摘要

Making new van der Waals materials with electronic or magnetic functionality is a chemical design challenge for the development of two-dimensional nano-electronic and energy conversion devices. We present the synthesis and properties of the van der Waals material Bi_4O_4SeCl_2, which is a 1:1 superlattice of the structural units present in the van der Waals insulator BiOCl and the three-dimensionally connected semiconductor Bi_2O_2Se. The presence of three anions gives the new structure both the bridging selenide anion sites that connect pairs of Bi_2O_2 layers in Bi_2O_2Se and the terminal chloride sites that produce the van der Waals gap in BiOCl. This retains the electronic properties of Bi_2O_2Se while reducing the dimensionality of the bonding network connecting the Bi_2O_2Se units to allow exfoliation of Bi_4O_4SeCl_2 to 1.4 nm height. The superlattice structure is stabilized by the configurational entropy of anion disorder across the terminal and bridging sites. The reduction in connective dimensionality with retention of electronic functionality stems from the expanded anion compositional diversity.
机译:制造具有电子或磁性功能的新型范德华材料是二维纳米电子和能量转换设备开发的化学设计挑战。我们介绍了范德华材料Bi_4O_4SeCl_2的合成和性能,它是存在于范德华绝缘子BiOCl和三维连接的半导体Bi_2O_2Se中的结构单元的1:1超晶格。三种阴离子的存在赋予了新的结构,即连接Bi_2O_2Se中Bi_2O_2层对的桥接硒阴离子位点和在BiOCl中产生范德华间隙的末端氯离子位点。这保留了Bi_2O_2Se的电子特性,同时减小了连接Bi_2O_2Se单元的键合网络的尺寸,从而允许将Bi_4O_4SeCl_2剥离到1.4 nm的高度。超晶格结构通过末端和桥连位点上阴离子无序的构型熵得以稳定。保留电子功能性而使连接维数减少的原因是阴离子组成的多样性增加。

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