首页> 外文期刊>Journal of the American Chemical Society >A NEW METASTABLE THREE-DIMENSIONAL BISMUTH SULFIDE WITH LARGE TUNNELS - SYNTHESIS, STRUCTURAL CHARACTERIZATION, ION-EXCHANGE PROPERTIES, AND REACTIVITY OF KBI3S5
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A NEW METASTABLE THREE-DIMENSIONAL BISMUTH SULFIDE WITH LARGE TUNNELS - SYNTHESIS, STRUCTURAL CHARACTERIZATION, ION-EXCHANGE PROPERTIES, AND REACTIVITY OF KBI3S5

机译:新型具有大通道的亚稳态三硫化二铋硫化物-KBI3S5的合成,结构表征,离子交换性质和反应活性

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The new ternary bismuth sulfide KBi3S5 forms from the reaction of Bi in a K2Sx flux at 300 degrees C (94% yield). The compound crystallizes in the orthorhombic space group Pmna (no. 62) with a = 17.013(5) Angstrom, b = 4.076(2) Angstrom, c = 17.365(4) Angstrom, V = 1204(2) Angstrom(3), and Z = 4 (final R/R(w) = 5.1/6.7%), data with F-0(2) > 3 sigma(F-0(2)) 782, no. of variables 59, 2 theta(max) = 50 degrees. The compound contains an open framework composed of edge-sharing BiS6 octahedra to form large tunnels which are occupied by K+ ions fractionally distributed over two sites. The S-S distances across the channel range from 9.45-14.02 Angstrom. KBi3S5 is a semiconductor with a band-gap of 1.21 eV. It undergoes a structural change upon heating at 520 degrees C. KBi3S5 exhibits topotactic ion-exchange with RbCl to give beta-RbBi3S5 at 350-380 degrees C. Ion-exchange with aqueous HCl in air forms an oxidized, metastable bismuth sulfide which undergoes endothermic decomposition to Bi2S3 at similar to 140 degrees C. [References: 58]
机译:Bi在K2Sx助熔剂中于300摄氏度(94%的收率)反应生成新的三元硫化铋KBi3S5。该化合物在正交晶体空间群Pmna(编号62)中结晶,其a = 17.013(5)埃,b = 4.076(2)埃,c = 17.365(4)埃,V = 1204(2)埃(3),并且Z = 4(最终R / R(w)= 5.1 / 6.7%),F-0(2)> 3 sigma(F-0(2))782的数据。的变量59,2 theta(max)= 50度。该化合物包含一个开放的框架,该框架由边共享的BiS6八面体组成,形成大的隧道,该隧道被部分分布在两个位置的K +离子占据。通道上的S-S距离范围为9.45-14.02埃。 KBi3S5是带隙为1.21 eV的半导体。它在520摄氏度加热时发生结构变化。KBi3S5在350-380摄氏度下与RbCl发生正离子交换,生成β-RbBi3S5。在空气中与HCl水溶液进行离子交换形成氧化的亚稳态硫化铋,该硫化铋吸热在约140摄氏度下分解为Bi2S3。[参考:58]

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