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Hollowing Sn-Doped TiO_2 Nanospheres via Ostwald Ripening

机译:通过奥斯特瓦尔德熟化空心锡掺杂的TiO_2纳米球

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摘要

The well-known physical phenomenon Ostwald ripening in crystal growth has been widely employed in template-free fabrication of hollow inorganic nanostructures in recent years. Nevertheless, all reported works so far are limited only to stoichiometric phase-pure solids. In this work we describe the first investigation of doped (nonstoichiometric) materials using Ostwald ripening as a means of creating interior space. In particular, we chose the xSnO_2-(1 - x)TiO_2 binary system to establish preparative principles for this approach in synthesis of structurally and compositionally complex nanomaterials. In this study, uniform Sn-doped TiO_2 nanospheres with hollow interiors in 100% morphological yield have been prepared with an aqueous inorganic route under hydrothermal conditions. Furthermore, our structural and surface analyses indicate that Sn~(4+) ions can be introduced linearly into TiO_2, and preferred structural phase(s) can also be attained (e.g., either anatase or rutile, or their mixtures). Fluoride anions of starting reagents are adsorbed on the surface sites of oxygen. The resultant anion overlayer may contribute to stabilization of surface and creation of repulsive interaction among the freestanding nanospheres. On the basis of these findings, we demonstrate that Ostwald ripening can now be employed as a general hollowing approach to architect interior spaces for both simple and complex nanostructures.
机译:近年来,众所周知的晶体生长中的奥斯特瓦尔德成熟的物理现象已被广泛用于空心无机纳米结构的无模板制造中。然而,迄今为止,所有报道的工作仅限于化学计量的纯相固体。在这项工作中,我们描述了使用奥斯特瓦尔德熟化作为创建内部空间的一种方法对掺杂(非化学计量)材料进行的首次研究。特别是,我们选择了xSnO_2-(1-x)TiO_2二元体系来建立该方法在结构和组成上复杂的纳米材料合成中的制备原理。在这项研究中,已在水热条件下通过水性无机途径制备了具有空心内部结构,均具有100%形态收率的均匀Sn掺杂TiO_2纳米球。此外,我们的结构和表面分析表明,Sn〜(4+)离子可以线性引入TiO_2中,并且还可以获得较好的结构相(例如,锐钛矿或金红石或它们的混合物)。起始试剂的氟阴离子吸附在氧气的表面部位。所得的阴离子覆盖层可有助于表面的稳定和在独立的纳米球之间形成排斥相互作用。基于这些发现,我们证明了奥斯特瓦尔德熟化现在可以用作建筑师内部空间中用于简单和复杂纳米结构的通用镂空方法。

著录项

  • 来源
    《Journal of the American Chemical Society》 |2007年第51期|p.15839-15847|共9页
  • 作者

    Jing Li; Hua Chun Zeng;

  • 作者单位

    Department of Chemical and Biomolecular Engineering and Minerals, Metals, and Materials Technology Center, Faculty of Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);美国《化学文摘》(CA);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
  • 关键词

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