机译:居里温度提高的G掺杂EuS纳米晶的合成及磁性能
Department of Chemistry, University of Wisconsin-Madison, 1101 University Avenue, Madison, Wisconsin 53706, United States;
Department of Chemistry, University of Wisconsin-Madison, 1101 University Avenue, Madison, Wisconsin 53706, United States;
Department of Chemistry, University of Wisconsin-Madison, 1101 University Avenue, Madison, Wisconsin 53706, United States;
Department of Chemistry, University of Wisconsin-Madison, 1101 University Avenue, Madison, Wisconsin 53706, United States;
Department of Chemistry, University of Wisconsin-Madison, 1101 University Avenue, Madison, Wisconsin 53706, United States;
机译:居里温度提高的G掺杂EuS纳米晶的合成及磁性能
机译:居里温度附近磁性半导体EuS和掺Gd的EuS薄膜的临界指数和畴结构
机译:掺H的Gd带的居里温度和磁熵变增强
机译:高品质铁磁性CR掺杂GaN和AlN薄膜的合成与表征,居里温度高于900K
机译:室温合成和表征高度单分散的过渡金属掺杂的氧化锌纳米晶体。
机译:增强居里温度的Gd掺杂EUS纳米晶体的合成和磁性
机译:非磁性Cu对增强Feconicrcu(X)高熵合金的低温磁性和居里温度的影响