首页> 外文期刊>Journal of the American Chemical Society >Anomalous Eu Valence State and Superconductivity in Undoped Eu_3Bi_2S_4F_4
【24h】

Anomalous Eu Valence State and Superconductivity in Undoped Eu_3Bi_2S_4F_4

机译:未掺杂Eu_3Bi_2S_4F_4的Eu价态和超导异常

获取原文
获取原文并翻译 | 示例
       

摘要

We have synthesized a novel europium bismuth sulfofluoride, Eu_3Bi_2S_4F_4, by solid-state reactions in sealed evacuated quartz ampules. The compound crystallizes in a tetragonal lattice (space group I4/mmm, a = 4.0771(1) A, c = 32.4330(6) A, and Z = 2), in which CaF_2-type Eu_3F_4 layers and NaCl-like BiS_2 bilayers stack alternately along the crystallographic c axis. There are two crystallographically distinct Eu sites, Eu(1) and Eu(2) at the Wyckoff positions 4e and 2a, respectively. Our bond valence sum calculation, based on the refined structural data, indicates that Eu(1) is essentially divalent, while Eu(2) has an average valence of ~ +2.64(5). This anomalous Eu valence state is further confirmed and supported, respectively, by Moessbauer and magnetization measurements. The Eu~(3+) components donate electrons into the conduction bands that are mainly composed of Bi 6p_x and 6p_y states. Consequently, the material itself shows metallic conduction and superconducts at 1.5 K without extrinsic chemical doping.
机译:我们通过密封的真空石英安瓿中的固态反应合成了新型的氟化fluor铋铋Eu_3Bi_2S_4F_4。该化合物以四方晶格结晶(空间群I4 / mmm,a = 4.0771(1)A,c = 32.4330(6)A,Z = 2),其中CaF_2型Eu_3F_4层和NaCl状BiS_2双层堆叠沿晶体学c轴交替排列。在Wyckoff位置4e和2a分别有两个晶体学上不同的Eu位点Eu(1)和Eu(2)。根据精炼的结构数据,我们的键合价和计算表明Eu(1)本质上为二价,而Eu(2)的平均价为〜+2.64(5)。这种反常的Eu价态分别由Moessbauer和磁化强度测量进一步证实和支持。 Eu〜(3+)组分将电子捐赠给主要由Bi 6p_x和6p_y态组成的导带。因此,材料本身在1.5 K时显示出金属导电性和超导性,而没有外部化学掺杂。

著录项

  • 来源
    《Journal of the American Chemical Society》 |2014年第43期|15386-15393|共8页
  • 作者单位

    Department of Physics, Zhejiang University, Hangzhou 310027, China;

    Department of Physics, Zhejiang University, Hangzhou 310027, China;

    Department of Physics, Zhejiang University, Hangzhou 310027, China;

    Department of Physics, Zhejiang University, Hangzhou 310027, China;

    Department of Physics, Zhejiang University, Hangzhou 310027, China;

    Department of Physics, Zhejiang University, Hangzhou 310027, China;

    Department of Physics, Zhejiang University, Hangzhou 310027, China;

    Department of Physics, Zhejiang University, Hangzhou 310027, China;

    Racah Institute of Physics, The Hebrew University, Jerusalem 91904, Israel;

    Racah Institute of Physics, The Hebrew University, Jerusalem 91904, Israel;

    Center of Electron Microscope, Zhejiang University, Hangzhou 310027, China;

    Department of Physics, Hangzhou Normal University, Hangzhou 310036, China;

    Department of Physics, Hangzhou Normal University, Hangzhou 310036, China;

    Department of Physics, Zhejiang University, Hangzhou 310027, China;

    Department of Physics, Zhejiang University, Hangzhou 310027, China,State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, China;

    Department of Physics, Zhejiang University, Hangzhou 310027, China,State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);美国《化学文摘》(CA);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-18 03:11:14

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号