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Ultrastable PbSe Nanocrystal Quantum Dots via in Situ Formation of Atomically Thin Halide Adlayers on PbSe(100)

机译:通过在PbSe(100)上原位形成原子薄的卤化物层形成超稳定的PbSe纳米晶体量子点

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摘要

The fast degradation of lead selenide (PbSe) nanocrystal quantum dots (NQDs) in ambient conditions impedes widespread deployment of the highly excitonic, thus versatile, colloidal NQDs. Here we report a simple in situ post-synthetic halide salt treatment that results in size-independent air stability of PbSe NQDs without significantly altering their optoelectronic characteristics. From TEM, NMR, and XPS results and DFT calculations, we propose that the unprecedented size-independent air stability of the PbSe NQDs can be attributed to the successful passivation of under-coordinated PbSe(100) facets with atomically thin PbX_2 (X = Cl, Br, I) adlayers. Conductive films made of halide-treated ultrastable PbSe NQDs exhibit markedly improved air stability and behave as an n-type channel in a field-effect transistor. Our simple in situ wet-chemical passivation scheme will enable broader utilization of PbSe NQDs in ambient conditions in many optoelectronic applications.
机译:硒化铅(PbSe)纳米晶体量子点(NQDs)在环境条件下的快速降解阻碍了高度激子,因此用途广泛的胶体NQD的广泛部署。在这里,我们报告了一种简单的原位合成后卤化物盐处理方法,该方法可导致PbSe NQD的尺寸不依赖于空气稳定性,而不会显着改变其光电特性。通过TEM,NMR和XPS结果以及DFT计算,我们认为PbSe NQD的空前尺寸独立的空气稳定性可以归因于原子配位薄的PbX_2(X = Cl ,Br,I)adlayers。由卤化物处理的超稳定PbSe NQD制成的导电膜具有显着改善的空气稳定性,并在场效应晶体管中表现为n型沟道。我们简单的原位湿化学钝化方案将使许多光电应用中的环境条件下PbSe NQD的广泛利用。

著录项

  • 来源
    《Journal of the American Chemical Society》 |2014年第25期|8883-8886|共4页
  • 作者单位

    Nanomechanical Systems Research Division, Korea Institute of Machinery and Materials (KIMM), Daejeon 305-343, Korea,Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701, Korea;

    Graduate School of Nanoscience and Technology, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701, Korea,Center for Nanomaterials and Chemical Reactions, Institute for Basic Science (IBS), Daejeon 305-701, Korea;

    Nanomechanical Systems Research Division, Korea Institute of Machinery and Materials (KIMM), Daejeon 305-343, Korea,Graduate School of Nanoscience and Technology, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701, Korea;

    Nanomechanical Systems Research Division, Korea Institute of Machinery and Materials (KIMM), Daejeon 305-343, Korea;

    Nanomechanical Systems Research Division, Korea Institute of Machinery and Materials (KIMM), Daejeon 305-343, Korea,Department of Nanomechatronics, Korea University of Science and Technology (UST), Daejeon 305-350, Korea;

    Graduate School of Nanoscience and Technology, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701, Korea,Center for Nanomaterials and Chemical Reactions, Institute for Basic Science (IBS), Daejeon 305-701, Korea,KAIST Institute for the NanoCentury, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701, Korea;

    Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701, Korea,KAIST Institute for the NanoCentury, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701, Korea;

    Nanomechanical Systems Research Division, Korea Institute of Machinery and Materials (KIMM), Daejeon 305-343, Korea,Department of Nanomechatronics, Korea University of Science and Technology (UST), Daejeon 305-350, Korea;

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