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Rational Design of Charge-Transfer Interactions in Halogen-Bonded Co-crystals toward Versatile Solid-State Optoelectronics

机译:卤素键合共晶体中面向多功能固态光电器件的电荷转移相互作用的合理设计

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摘要

Charge-transfer (CT) interactions between donor (D) and acceptor (A) groups, as well as CT exciton dynamics, play important roles in optoelectronic devices, such as organic solar cells, photodetectors, and light-emitting sources, which are not yet well understood. In this contribution, the self-assembly behavior, molecular stacking structure, CT interactions, density functional theory (DFT) calculations, and corresponding physicochemical properties of two similar halogen-bonded co-crystals are comprehensively investigated and compared, to construct an "assembly-structure-CT-property" relationship. Bpe-IFB wire-like crystals (where Bpe = 1,2-bis(4-pvridyl)ethylene and IFB = 1,3,5-trifluoro-2,4,6-triiodobenzene), packed in a segregated stacking form with CT ground and excited states, are measured to be quasi-one-dimensional (ID) semiconductors and show strong violet-blue photoluminescence (PL) from the lowest CT_1 excitons (Φ_(PL) = 26.1%), which can be confined and propagate oppositely along the 1D axial direction. In comparison, Bpe-F_4DIB block-like crystals (F_4DIB = 1,4-diiodotetrafluorobenzene), packed in a mixed stacking form without CT interactions, are determined to be insulators and exhibit unique white light emission and two-dimensional optical waveguide property. Surprisingly, it seems that the intrinsic spectroscopic states of Bpe and F_4DIB do not change after co-crystallization, which is also confirmed by theoretical calculations, thus offering a new design principle for white light emitting materials. More importantly, we show that the CT interactions in co-crystals are related to their molecular packing and can be triggered or suppressed by crystal engineering, which eventually leads to distinct optoelectronic properties. These results help us to rationally control the CT interactions in organic D-A systems by tuning the molecular stacking, toward the development of a fantastic "optoelectronic world".
机译:供体(D)和受体(A)之间的电荷转移(CT)相互作用以及CT激子动力学在诸如有机太阳能电池,光电探测器和发光源等光电设备中起着重要作用,尚未完全了解。在此贡献中,对两种相似的卤素键合共晶体的自组装行为,分子堆叠结构,CT相互作用,密度泛函理论(DFT)计算以及相应的理化性质进行了全面研究和比较,以构建“结构-CT-属性”关系。 Bpe-IFB线状晶体(其中Bpe = 1,2-双(4-戊基)乙烯,IFB = 1,3,5-三氟-2,4,6-三碘代苯)与CT隔离堆积基态和激发态被测量为准一维(ID)半导体,并且从最低的CT_1激子(Φ_(PL)= 26.1%)显示强紫蓝光致发光(PL),可以将其限制并反向传播沿一维轴向。相比之下,以无CT相互作用的混合堆叠形式堆积的Bpe-F_4DIB块状晶体(F_4DIB = 1,4-二碘四氟苯)被确定为绝缘体,并表现出独特的白光发射和二维光波导特性。出人意料的是,似乎Bpe和F_4DIB的固有光谱状态在共结晶后不会改变,这也得到了理论计算的证实,从而为白色发光材料提供了新的设计原理。更重要的是,我们表明共晶体中的CT相互作用与它们的分子堆积有关,并且可以通过晶体工程来触发或抑制,最终导致独特的光电性能。这些结果有助于我们通过调整分子堆叠来合理控制有机D-A系统中的CT相互作用,从而朝着梦幻般的“光电世界”发展。

著录项

  • 来源
    《Journal of the American Chemical Society》 |2015年第34期|11038-11046|共9页
  • 作者单位

    Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China,University of Chinese Academy of Sciences, Beijing 100049, P. R. China;

    Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China;

    Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China;

    Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China,University of Chinese Academy of Sciences, Beijing 100049, P. R. China;

    Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China;

    Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China;

    Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China;

    Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China,Collaborative Innovation Center of Chemical Science and Engineering and School of Science, Tianjin University, Tianjin 300072, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);美国《化学文摘》(CA);
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  • 正文语种 eng
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