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Synthesis, Internal Structure, and Formation Mechanism of Monodisperse Tin Sulfide Nanoplatelets

机译:单分散硫化锡纳米片的合成,内部结构及形成机理

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摘要

Tin sulfide nanoparticles have a great potential for use in a broad range of applications related to solar energy conversion (photovoltaics, photocatalysis), electrochemical energy storage, and thermoelectrics. The development of chemical synthesis methods allowing for the precise control of size, shape, composition, and crystalline phase is essential. We present a novel approach giving access to monodisperse square SnS nanoplatelets, whose dimensions can be adjusted in the range of 4-15 run (thickness) and 15-100 nm (edge length). Their growth occurs via controlled assembly of initially formed polyhedral seed nanoparticles, which themselves originate from an intermediate tetrachlorotin-oleate complex. The SnS nanoplatelets crystallize in the α-SnS orthorhombic herzenbergite structure (space group Pnma) with no evidence of secondary phases. Electron tomography, high angle annular dark field scanning transmission electron microscopy and electron diffraction combined with image simulations evidence the presence of ordered Sn vacancy rich (100) planes within the SnS nanoplatelets, in accordance with their slightly S-rich composition observed. When using elemental sulfur instead of thioacetamide as the sulfur source, the same reaction yields small (2-3 nm) spherical SnS_2 nanoparticles, which crystallize in the berndtite 4H crystallographic phase (space group P3m1). They exhibit quantum confinement (E_g = 2.8 eV vs 2.2 eV in the bulk) and room temperature photoluminescence. By means of electrochemical measurements we determined their electron affinity EA = -4.8 eV, indicating the possibility to use them as a substitute for CdS (EA = -4.6 eV) in the buffer layer of thin film solar cells.
机译:硫化锡纳米颗粒在与太阳能转换(光伏,光催化),电化学储能和热电学相关的广泛应用中具有巨大的潜力。发展化学合成方法以精确控制尺寸,形状,组成和结晶相至关重要。我们提出了一种新颖的方法,可访问单分散方形SnS纳米片,其尺寸可在4-15 run(厚度)和15-100 nm(边缘长度)的范围内进行调整。它们的生长通过最初形成的多面体种子纳米粒子的受控组装而发生,这些粒子本身源自中间的四氯锡-油酸酯复合物。 SnS纳米片晶在α-SnS斜方晶Herzenbergite结构(空间群Pnma)中结晶,没有第二相的迹象。电子断层扫描,高角度环形暗场扫描透射电子显微镜和电子衍射与图像模拟相结合,证明了SnS纳米片中存在有序的富Sn空位(100)平面,这与它们观察到的S富态成分略有不同。当使用元素硫代替硫代乙酰胺作为硫源时,相同的反应会产生小的(2-3 nm)球形SnS_2纳米颗粒,该颗粒在绿铁矿4H结晶相(空间群P3m1)中结晶。它们表现出量子限制(E_g = 2.8 eV vs整体2.2 eV)和室温光致发光。通过电化学测量,我们确定了它们的电子亲和力EA = -4.8 eV,表明有可能在薄膜太阳能电池的缓冲层中将它们用作CdS的替代物(EA = -4.6 eV)。

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  • 来源
    《Journal of the American Chemical Society》 |2015年第31期|9943-9952|共10页
  • 作者单位

    Univ. Grenoble Alpes, INAC-SPrAM, F-38054 Grenoble Cedex 9, France ,CNRS, SPrAM, F-38054 Grenoble Cedex 9, France ,CEA, INAC-SPrAM, F-38054 Grenoble Cedex 9, France ,Solvay Research and Innovation Center of Paris, 52 rue de la Haie Coq, 93000 Aubervilliers, France;

    Univ. Grenoble Alpes, INAC-SP2M, F-38054 Grenoble Cedex 9, France ,CEA INAC-SP2M, F-38054 Grenoble Cedex 9, France;

    Univ. Grenoble Alpes, INAC-SP2M, F-38054 Grenoble Cedex 9, France ,CEA INAC-SP2M, F-38054 Grenoble Cedex 9, France;

    Department of Materials Science and Engineering, University of Illinois, Urbana-Champaign, Urbana, Illinois 61801, United States;

    Univ. Grenoble Alpes, INAC-SCIB, F-38054 Grenoble Cedex 9, France ,CEA INAC-SCIB, F-38054 Grenoble Cedex 9, France;

    Univ. Grenoble Alpes, INAC-SPrAM, F-38054 Grenoble Cedex 9, France ,CNRS, SPrAM, F-38054 Grenoble Cedex 9, France ,CEA, INAC-SPrAM, F-38054 Grenoble Cedex 9, France;

    Univ. Grenoble Alpes, INAC-SPrAM, F-38054 Grenoble Cedex 9, France ,CNRS, SPrAM, F-38054 Grenoble Cedex 9, France ,CEA, INAC-SPrAM, F-38054 Grenoble Cedex 9, France;

    Univ. Grenoble Alpes, INAC-SPrAM, F-38054 Grenoble Cedex 9, France ,CNRS, SPrAM, F-38054 Grenoble Cedex 9, France ,CEA, INAC-SPrAM, F-38054 Grenoble Cedex 9, France;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);美国《化学文摘》(CA);
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