机译:使用乙醇/甲烷化学气相沉积法生长密度高于100管/μm的水平半导体SWNT阵列
Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China,Division of Advanced Nanomaterials, Suzhou Institute of Nanotech and Nanobionics, Chinese Academy of Sciences, Suzhou 215123, P. R. China,University of Chinese Academy of Sciences, Beijing 100049, P. R. China;
Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China;
Division of Advanced Nanomaterials, Suzhou Institute of Nanotech and Nanobionics, Chinese Academy of Sciences, Suzhou 215123, P. R. China;
Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China;
机译:通过脉冲化学气相沉积法增加短SWNT阵列的增量生长
机译:使用双金属催化剂优先生长半导体SWNT阵列的乙醇中C-O和C-C键的选择性断裂
机译:金属有机化学气相沉积法外延生长(100)β-FeSi_2模板
机译:通过位置控制的种子阵列通过有机金属化学气相沉积在精确的Si(001)衬底上生长低缺陷密度InP
机译:利用计算流体力学评估水平型中尺度化学气相沉积反应器中流体动力学对薄膜生长的影响
机译:单晶高级锰硅化物纳米线阵列通过双管化学气相沉积具有出色的物理性质
机译:单晶高级锰硅化物纳米线阵列,通过双管化学气相沉积具有出色的物理性质
机译:si(100)上乙烯化学气相沉积生长si-C薄膜的X射线光电子能谱研究。