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Solvation Reaction Field at the Interface Measured by Vibrational Sum Frequency Generation Spectroscopy

机译:振动和频率发生谱法测量界面处的溶剂化反应场

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摘要

Interfacial electric fields are important in several areas of chemistry, materials sciences, and device physics. However, they are poorly understood, partly because they are difficult to measure directly and model accurately. We present both a spectroscopic experimental investigation and a theoretical model for the interfacial field at the junction of a conductor and a dielectric. First, we present vibrational sum frequency generation (VSFG) results of the nitrile (CN) stretch of 4-mercaptobenzo-nitrile (4-MBN) covalently attached to a gold surface and in contact with a variety of liquid dielectrics. It is found that the CN stretch frequency red-shifts with increasing dielectric constant. Second, we build a model in direct analogy to the well-known Onsager reaction field theory, which has been successful in predicting vibrational frequency shifts in bulk dielectric media. Clearly, due to the asymmetric environment, with metal on one side and a dielectric on the other, the bulk Onsager model is not applicable at the interface. To address this, we apply the Onsager model to the interface accounting for the asymmetry. The model successfully explains the red-shift of the CN stretch as a function of the dielectric constant and is used to estimate the reaction field near the interface. We show the similarities and differences between the conventional bulk Onsager model and the interfacial reaction field model. In particular, the model emphasizes the importance of the metal as part of the solvation environment of the tethered molecules. We anticipate that our work will be of fundamental value to understand the crucial and often elusive electric fields at interfaces.
机译:界面电场在化学,材料科学和设备物理学的多个领域都很重要。但是,对它们的了解很少,部分原因是它们难以直接测量和准确建模。我们同时提出了光谱实验研究和理论模型的导体和电介质的交界处的界面场。首先,我们介绍了共巯基附着在金表面并与多种液体电介质接触的4-巯基苯甲腈(4-MBN)腈(CN)拉伸的振动总频率生成(VSFG)结果。发现CN拉伸频率随着介电常数的增加而红移。其次,我们直接类似于著名的Onsager反应场理论建立模型,该模型已成功预测了块状介电介质中的振动频率偏移。显然,由于环境不对称,一侧为金属,另一侧为电介质,因此本体上的Onsager模型不适用于该界面。为了解决这个问题,我们将Onsager模型应用于解决不对称问题的接口。该模型成功地解释了CN拉伸的红移随介电常数的变化,并用于估算界面附近的反应场。我们展示了传统的本体Onsager模型与界面反应场模型之间的异同。该模型特别强调了金属作为拴系分子的溶剂化环境的一部分的重要性。我们期望我们的工作对了解界面处的关键且往往难以捉摸的电场具有重要的价值。

著录项

  • 来源
    《Journal of the American Chemical Society》 |2017年第6期|2369-2378|共10页
  • 作者单位

    Department of Chemistry, University of Southern California, Los Angeles, California 90089, United States;

    Department of Chemistry, University of Southern California, Los Angeles, California 90089, United States;

    Department of Chemistry, University of Southern California, Los Angeles, California 90089, United States;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);美国《化学文摘》(CA);
  • 原文格式 PDF
  • 正文语种 eng
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  • 入库时间 2022-08-18 03:07:52

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