GaN ultraviolet photodioes-photoresepnse modelling

摘要

Main efforts are currently directed to a new generation of ultraviolet (UV) detectors made from wide-band- gap semiconductors; among them the most promising are diamond and ALGaN. The latest progress in devel- opment of AlGaN UV photodiodes is shortly described. Further considerations are restricted to the spectral characteristics of p-n GaN photodiodes. In the paper, for the first time, the minority carrier diffusion lengths in n-on-p and p-on-n Gan photodiodes have been estimated.