首页> 外文期刊>Journal of Technical Physics >EFFECTIVE DISLOCATION LINES IN CONTINUOUSLY DISLOCATED CRYSTALS I. MATERIAL ANHOLONOMITY
【24h】

EFFECTIVE DISLOCATION LINES IN CONTINUOUSLY DISLOCATED CRYSTALS I. MATERIAL ANHOLONOMITY

机译:连续错位的晶体中的有效错位线I.材料异性性

获取原文
获取原文并翻译 | 示例
           

摘要

A continuous geometric description of Bravais monocrystals with many dislocations and secondary point defects created by the distribution of these dislocations is proposed. Namely, it is distinguished, basing oneself on Kondo and Kroner's Gedanken Experiments for dislocated bodies, an anholonomic triad of linearly independent vector fields. The triad defines local crystallographic directions of the defective crystal as well as a continuous counterpart of the Burgers vector for single dislocations. Next, the influence of secondary point defects on the distribution of many dislocations is modeled by treating these local crystallographic directions, as well as Burgers circuits, as those located in such a Riemannian material space that becomes an Euclidean 3-manifold when dislocations are absent. Some consequences of this approach are discussed.
机译:提出了具有许多位错和由这些位错的分布产生的次要点缺陷的Bravais单晶的连续几何描述。就是说,它是基于Kondo和Kroner的“ Gedanken实验”来区分的,它是位错体的线性独立矢量场的完整三元组。三重轴定义了缺陷晶体的局部晶体学方向,以及单一位错的Burgers向量的连续对应物。接下来,通过处理这些局部晶体学方向以及Burgers电路,模拟次要点缺陷对许多位错分布的影响,就像那些位于不存在位错时成为欧几里得3流形的黎曼材料空间中的那些一样。讨论了这种方法的一些后果。

著录项

  • 来源
    《Journal of Technical Physics》 |2008年第4期|p.193-214|共22页
  • 作者

    A. TRZESOWSKI;

  • 作者单位

    Institute of Fundamental Technological Research Polish Academy of Sciences Swietokrzyska 21, 00-049 Warszawa, Poland;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程物理学;
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号