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Body Grounding of RF Devices Using Indium Alloy 2 for Flight Applications

机译:使用铟合金2用于飞行应用的RF器件的车身接地

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摘要

Trends in RF devices are towards miniaturization & adoption of more versatile devices. This trend results in the RFIC, MMIC version of the devices which are hermetically sealed in various metallic or plastic packages. The packages are to be mounted on the PCB to realize the complete circuit adhering to specific requirements. The body is gold plated which is attached to the gold plated pattern. Body grounding of RF circuits plays important role in circuit performance at microwave frequencies, as parasitic introduced due to improper grounding, leads to oscillations which renders in degraded performance. The process of body grounding and material selection is critical in device fabrication. The intermetallic bonds due to application of various materials, thermal budget and uniform grounding are the other criteria to be carefully considered. The new material requires proper handling, qualification and characterization to enable the process to be implemented in the flight hardware. The process is segregated into various steps such as detail study of material properties, baking and cleaning of PCB, tinning of leads, sequence of soldering & attachment, mounting of other components. This is followed by electrical testing and characterization to qualify the material for flight applications. In the present case we have qualified Indium alloy 2 which is having lower liquidus and solidus temperature compared to previously employed Indium alloy 7. VCO device is taken to qualify the process. The Indium alloy 2 (InPbAg) material is taken for this study and attached on RT-duriod substrate. The subsequent circuit is subjected to extensive qualification. Further complete electrical characterization, FTIR analysis, XRF and X-ray is carried out to qualify the process. The critical aspect is the intermixing of various materials which can result in the formation of inter-metallic bonds for which FTIR study performed along with XRF characterization. This article details the various process steps, attachment sequences, modelling, qualification plan and characterization for qualifying the process, further article proposed alternative material for body attachment having low temperature process compared to existing one without degradation of any electrical characteristics.
机译:RF器件的趋势是小型化和采用更多多功能设备。这种趋势导致RFIC,MMIC版本的装置,该装置在各种金属或塑料包装中密封。封装将安装在PCB上,以实现遵守特定要求的完整电路。身体是镀金,它连接到镀金图案上。 RF电路的身体接地在微波频率下对电路性能起着重要作用,因为由于接地不当引入的寄生,导致振荡,使性能降低。身体接地和材料选择的过程在装置制造中是至关重要的。由于应用各种材料,热预算和均匀接地而导致的金属间键是被仔细考虑的其他标准。新材料需要适当的处理,资格和表征,以使得在飞行硬件中实现的过程。该过程被隔离成各种步骤,例如材料特性,烘烤和清洁PCB,镀锡,焊接序列,焊接序列和附件的序列,安装的其他部件。接下来是电气测试和表征,以限定飞行应用的材料。在当前情况下,与先前使用的铟合金7. VCO器件相比,我们具有较低的液相高合金2,其具有较低的液体和固体温度。VCO器件符合该方法。铟合金2(inPBAG)材料用于本研究并附着在RT-DURIOD基底上。随后的电路经受广泛的资格。进一步完成电气表征,进行FTIR分析,XRF和X射线,以获得该过程。关键方面是各种材料的混合,这可能导致形成与XRF表征一起进行的FTIR研究的金属间键的形成。本文详细介绍了各种过程步骤,附件序列,建模,资格化计划和特征,以便有资格化该过程,进一步制成了与现有的具有低温过程的身体附着的替代材料的替代材料,而没有任何电气特性的劣化。

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