Analysis of the One-Dimensional Steady-State Semiconductor Multijunction Device Model with the Avalanche Effect

摘要

In this paper we consider the stationary multijunction device model with the avalanche effect. Using the singular perturbation method, an approximation to the current voltage curve is obtained. The cause and the condition for the occurrence of saturation current is analyzed. Especially, it is pointed that the avalanche effect is responsible for the blowing up of the saturation current We prove the existence of multiple steady-state solution when the ionization rate is relatively small. Finally, some numerical examples are presented to show the reliability of the theoretical results.