High-quality ZnS thin-film growth for flat-panel displays

摘要

A comprehensive study is reported of the chemical-beam epitaxy (CBE) and metalorganic molecular-beam epitaxy (MOMBE) growth of undoped and Mn-doped ZnS on (100) silicon and GaAs substrates for applications in advanced electroluminescent displays and optoelectronic device integration. Low-temperature photoluminescence studies on undoped ZnS at 10K show highly pronounced excitonic and band-edge emission bands with several orders of associated longitudinal optical phonon replicas. The homogeneously Mn-doped ZnS layers showed the characteristic orange luminescence which depended on the concentration of Mn. However, Mn delta-doped ZnS exhibited much brighter luminescence than the ZnS homogeneously doped with a comparable number of Mn ions. The temperature dependence of the Mn luminescence was investigated in detail. Different temperature dependences were observed from the homogeneously and delta-doped ZnS layers. A single-parameter configuration model was applied and found to explain the luminescence properties of homogeneously doped ZnS. For delta-doped ZnS, the configuration coordinate model failed and the antiferromagnetic interaction between the Mn ions must be considered to explain the observed results.