首页> 外文期刊>Journal of propulsion and power >Film-Cooling Effectiveness of Antivortex Holes at Three Different Mainstream Turbulence Levels
【24h】

Film-Cooling Effectiveness of Antivortex Holes at Three Different Mainstream Turbulence Levels

机译:三种不同主流湍流水平下的防涡流膜冷却效果

获取原文
获取原文并翻译 | 示例
           

摘要

The effects of mainstream turbulence intensity on the film-cooling effectiveness of antivortex film-cooling holes were experimentally investigated. Four film-cooling hole configurations and three mainstream turbulence intensities (1,6.5, and 16) were tested. The primary film-cooling hole had a 30 deg angle with respect to the mainstream flow, and the angles between the primary and auxiliary holes of the antivortex holes were 0,15, and 30 deg, respectively. The film-cooling effectiveness was measured using pressure-sensitive paint technique. The particle image velocimetry measurement results showed that the coolant from the antivortex film-cooling hole stayed closer to the endwall than that for the cylindrical hole case. The film-cooling effectiveness for the antivortex hole cases was higher than that for the cylindrical hole case for all blowing ratios. For the antivortex hole cases, the coolant-covered area generally increased as the blowing ratio increased. For the high mainstream turbulence intensity case, the higher blowing ratio cases showed greater film-cooling effectiveness due to the dragdown of the coolant Among the tested configurations, the 15 deg antivortex hole case showed the best film-cooling performance at all blowing ratios and turbulence intensities.
机译:实验研究了主流湍流强度对反涡流膜冷却孔膜冷却效果的影响。测试了四个薄膜冷却孔配置和三个主流湍流强度(1、6.5和16)。初级膜冷却孔相对于主流具有30度角,并且防涡流孔的初级孔和辅助孔之间的角度分别为0.15度和30度。使用压敏涂料技术测量膜的冷却效果。颗粒图像测速仪的测量结果表明,与圆柱形孔的情况相比,来自防涡流膜冷却孔的冷却剂更靠近端壁。在所有吹塑比下,防涡孔外壳的薄膜冷却效率均高于圆柱孔外壳。对于防涡孔情况,随着鼓风比的增加,冷却剂覆盖面积通常会增加。对于高主流湍流强度的情况,由于冷却剂的降落,较高吹气比的情况显示出更好的薄膜冷却效果。在测试配置中,15度防涡孔情况在所有吹气比和湍流下都表现出最佳的薄膜冷却性能。强度。

著录项

  • 来源
    《Journal of propulsion and power》 |2017年第6期|1561-1569|共9页
  • 作者单位

    Korea Aerospace University, Goyang 412-791, Republic of Korea;

    Korea Aerospace University, Goyang 412-791, Republic of Korea;

    Korea Aerospace University, Goyang 412-791, Republic of Korea;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号