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Study of PCL mechanism Influence of grid/PAM state on PCL

机译:PCL机制的研究网格/ PAM状态对PCL的影响

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摘要

Basic studies to clarify the premature capacity loss (PCL) mechanism have been carried out. It was found that PCL is a phenomenon due to the increase of positive plate resistance, especially the interfacial resistance between the positive grid and the positive active material (PAM) by PbSO_4 formation in the corrosion layer. PCL occurred when the adhesion between the grid and the PAM was poor, H_2SO_4 concentration at the interface between the grid and the PAM is high and the corrosion layer mainly consisted of β-PbO_2.
机译:已经进行了基础研究以阐明过早的容量损失(PCL)机制。发现PCL是由于正极板电阻,特别是由于腐蚀层中的PbSO_4形成而引起的正极板和正极活性材料(PAM)之间的界面电阻增加的现象。当格栅与PAM之间的附着力差,格栅与PAM之间的界面处的H_2SO_4浓度高,腐蚀层主要由β-PbO_2组成时,发生PCL。

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