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首页> 外文期刊>Journal of power sources >Investigation of the chemo-mechanical coupling in lithiation/delithiation of amorphous Si through simulations of Si thin films and Si nanospheres
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Investigation of the chemo-mechanical coupling in lithiation/delithiation of amorphous Si through simulations of Si thin films and Si nanospheres

机译:通过硅薄膜和硅纳米球的模拟研究非晶硅的锂化/脱锂过程中的化学-机械耦合

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A strong asymmetric rate behavior between lithiation and delithiation has been observed in amorphous Si (a-Si) anode in the form of thin films, but not in other geometries, such as Si nanospheres. This work investigated the rate behavior of the two geometries through numerical simulations. The results reveal that the rate behavior is affected by the geometry and the constraint of the electrode, the chemo-mechanical coupling, and the prior process. A substrate-constrained film has a relatively low surface/volume ratio and a constant surface area. Its lithiation has a great tendency to be hindered by surface limitation. The chemo-mechanical coupling also plays an important role. The stress profiles differ in the two geometries but both affect the lithiation process more than the delithiation process. The overall delithiation capacity is affected very little by the chemo-mechanical coupling. In cyclic loading, the delithiation capacity is reduced at the same rate as the lithiation capacity because of the low initial state of charge in the electrode. The asymmetric rate behavior was absent under cyclic loading. On the other hand, a slow charging process resulted in a better retained delithiation capacity and an asymmetric rate behavior at higher rates. (C) 2016 Elsevier B.V. All rights reserved.
机译:在以薄膜形式的非晶Si(a-Si)阳极中观察到了在锂化和去锂化之间的强烈不对称速率行为,但是在其他几何形状(如Si纳米球)中却没有观察到。这项工作通过数值模拟研究了两个几何的速率行为。结果表明,速率行为受电极的几何形状和约束,化学机械耦合以及现有工艺的影响。受衬底约束的膜具有相对较低的表面积/体积比和恒定的表面积。其锂化有很大的趋势受到表面限制的阻碍。化学机械耦合也起重要作用。应力分布在两个几何形状中有所不同,但两者对锂化过程的影响要大于去锂化过程的影响。化学机械耦合几乎不会影响整体的脱锂能力。在循环加载中,由于电极中的低初始电荷状态,脱锂能力以与锂化能力相同的速率降低。循环载荷下不存在不对称速率行为。另一方面,缓慢的充电过程会导致更好的保留脱锂能力和更高速率下的不对称速率行为。 (C)2016 Elsevier B.V.保留所有权利。

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