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机译:Bi_2zn_(2/3)Nb_(4/3)O_7薄膜中的超高储能密度和超宽工作温度范围作为新型无铅电容器
Dongguan Univ Technol Sch Elect Engn & Intelligentizat Dongguan 523808 Guangdong Peoples R China;
Tianjin Univ Sch Microelect Tianjin 300072 Peoples R China|Tianjin Univ Tianjin Key Lab Imaging & Sensing Microelect Tech Tianjin 300072 Peoples R China;
Dalian Univ Technol Sch Mech Engn Dalia 116024 Liaoning Peoples R China;
Tianjin Univ Sch Microelect Tianjin 300072 Peoples R China|Tianjin Univ Tianjin Key Lab Imaging & Sensing Microelect Tech Tianjin 300072 Peoples R China;
Energy storage density; Operating temperature range; Bi2Zn2/3Nb4/3O7; Lead-free; Thin films;
机译:室温沉积Bi_2Zn_(2/3)Nb_(4/3)O_7薄膜的制备及电性能
机译:Bi_2Zn_(2/3)Nb_(4/3)O_7薄膜的结构和介电性能
机译:高储能密度的无铅BIFEO3掺杂Na0.5bi0.5tio3-batio3薄膜电容,温度稳定性良好
机译:退火温度对MOCVD制备的Bi_(1.5)Zn_(1.0)Nb_(1.5)O_7薄膜介电性能的影响
机译:用于薄膜电容器的聚合物样氢化碳的合成及双不同电介质对高能密度应用电容器电性能的影响
机译:钛酸铋钠基无铅陶瓷在宽温度范围内的高储能密度
机译:通过工程多丝电和弛豫铁电多层薄膜增强超宽度温度范围内的无铅电容器的能量存储性能
机译:金刚石类金刚石薄膜的研究及其在大口径电动枪和相关储能装置(电容器和电池)中的应用