首页> 外文期刊>The journal of physics and chemistry of solids >CRYSTAL FIELD AND EPR ANALYSIS FOR D-5 (3D(4) AND 3D(6)) IONS AT TETRAGONAL SITES - APPLICATIONS TO FE2+ IONS IN MINERALS AND CR2+ IMPURITIES IN SEMICONDUCTORS
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CRYSTAL FIELD AND EPR ANALYSIS FOR D-5 (3D(4) AND 3D(6)) IONS AT TETRAGONAL SITES - APPLICATIONS TO FE2+ IONS IN MINERALS AND CR2+ IMPURITIES IN SEMICONDUCTORS

机译:四面体D-5(3D(4)和3D(6))离子的晶体场和EPR分析-在矿物中的FE2 +离子和半导体中的CR2 +杂质中的应用

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Two methods for calculating the energy levels arising from the D-5 multiplet and the zero-held splitting (ZFS) parameters for the ground orbital singlet of a 3d(4) or 3d(6) ion at tetragonal sites in crystals are considered. A superposition model is used to relate the changes in the structural parameter r = R(1)/R(2) (where R(2) is the in-plane and R(1) is the out-of-plane ligand distance), which accounts for the elongation or compression of a perfect octahedron, with the tetragonal crystal held parameters B-2(0), B-4(0) and B-4(4). By separating the cubic (Dq) component and the axial one (B-2(0)) the nature of the tetragonal distortion is related to the crystal structure. A matrix diagonalization (MD) method is used to determine numerically the ZFS parameters b(k)(q). The matrix of Hamiltonian, which includes the tetragonal CF, spin-orbit (lambda) and spin-spin (rho) coupling, is obtained and its eigenvalues are related to b(k)(q)'s. The results of the MD method are compared for a wide range of values of B-2(0), Dq and r with those obtained from the microscopic spin Hamiltonian (MSH) theory developed earlier within the D-5 approximation. The following contributions are taken into account in the MSH expressions: lambda(2), lambda(3), lambda(4), rho, rho(2), and lambda rho. The MD and MSH methods together with the superposition model enable study of the variation of the energy levels and ZFS parameters with the crystal field (CF) parameters and the related crystal structure ones. The dependence of the energy levels and ZFS parameters b(2)(0), b(4)(0) and b(4)(4) on Dq, B-2(0) and r resulting from both methods is presented in the form of diagrams. The ranges of validity of the MD and MSH approach are established. Numerical calculations are carried out for Fe2+ ion in the minerals FeSb2S4, BaFeSi4O10 and FeTa2O6 and for Cr2+ impurity in semiconductors CdS, ZnS and ZeSe. Good agreement with experimental data for the ZFS parameters b(k)(q) is obtained. [References: 57]
机译:考虑了两种计算D-5多重态和晶体四方位点的3d(4)或3d(6)离子的地面轨道单峰的零保持分裂(ZFS)参数产生的能级的方法。使用叠加模型来关联结构参数r = R(1)/ R(2)的变化(其中R(2)是平面内,R(1)是平面外配体距离) ,它说明一个完美的八面体的伸长或压缩,四方晶体的参数为B-2(0),B-4(0)和B-4(4)。通过分离立方分量(Dq)和轴向分量(B-2(0)),四方畸变的性质与晶体结构有关。矩阵对角化(MD)方法用于从数字上确定ZFS参数b(k)(q)。获得了包含四方CF,自旋轨道(λ)和自旋自旋(rho)耦合的哈密顿矩阵,其特征值与b(k)(q)有关。将MD方法的结果在B-2(0),Dq和r的较宽值范围内与从D-5近似内较早发展的微观自旋哈密顿量(MSH)理论获得的值进行比较。 MSH表达式中考虑了以下贡献:lambda(2),lambda(3),lambda(4),rho,rho(2)和lambda rho。 MD和MSH方法以及叠加模型可以研究能级和ZFS参数随晶体场(CF)参数和相关晶体结构参数的变化。能量水平和ZFS参数b(2)(0),b(4)(0)和b(4)(4)对Dq,B-2(0)和r的依赖关系由两种方法得出图表的形式。建立了MD和MSH方法的有效性范围。对矿物FeSb2S4,BaFeSi4O10和FeTa2O6中的Fe2 +离子以及半导体CdS,ZnS和ZeSe中的Cr2 +杂质进行了数值计算。获得与ZFS参数b(k)(q)的实验数据良好的一致性。 [参考:57]

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