A comparative study of transition states of porous silicon by surface photovoltage spectroscopy and time-resolved photoluminescence spectroscopy

摘要

It is shown that a series of electronic transition states in porous silicon were observed directly by surface photovoltage spectroscopy. As compared with the results of time-resolved photoluminescence spectroscopy on the same samples, the identification and correlation of transition states and luminescent bands in the porous silicon are presented. The results show that the transition and luminescent bands in porous silicon depend on the anodizing conditions.