Optimized design of narrow spectral linewidth nonpolar m-plane InGaN/GaN micro-scale light-emitting diode

摘要

In this paper, a non-polar InGaN/GaN LED, which is oriented in the direction of the m-plane, is simulated through the TCAD tool. The In-GaN/GaN LED device reported in this paper is designed and optimized to modify its characteristic parameters to achieve narrow linewidth. Device simulation of LED is carried out in an LED simulator and extracted data is represented in the form of graphs. This paper has a prime focus on the line-width of LEDs. After optimization of design, the linewidth of LED is reduced from 32 nm (calculated graphically by measuring - 3 db linewidth) to 5 nm. In addition to line-width optimization, the impact of the device dimension and In_xGa_(1-x)N mole fraction, on peak wavelength and maximum amplitude is reported. The significance of reducing the linewidth is that it reduces the material dispersion in optical fiber communication systems operated with LEDs. Material dispersion is a mechanism which limits the capacity of optical fibers. Hence, it improves the performance of the optical fiber and reduces the power consumption and hence it improve the overall performance and efficiency of the communication systems.