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FORMATION AND GROWTH PROCESS OF DISLOCATION LOOPS IN ZIRCALOYS UNDER ELECTRON IRRADIATION

机译:电子辐照下Zlocalois位错环的形成和生长过程

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We have investigated the formation and growth process of dislocation loops in Zircaloys (Zrys) under electron irradiation using a high voltage electron microscope (HVEM). Dislocation loops are of great importance to degradation phenomena in fuel claddings, such as irradiation growth and reduced ductility in light water reactors. TEM specimens of three kinds of Zircaloys (Zry-2, Zry-4 and improved Zry-2) were irradiated with 1 MeV electrons at temperatures from 320 K to 970 K in the HVEM. Interstitial-type dislocation loops with the Burgers vector b = 1/3<[11(2)over bar 0]> were formed on the pyramidal or the prismatic planes at the beginning of irradiation. It was found that the nucleation and growth process of those loops follows the kinetics based on the di-interstitial model where di-interstitials act as the nuclei of interstitial dislocation loops. Based on this model; migration energies of interstitials and vacancies were determined to be 0.15-0.22 eV and 1.0-1.2 eV, respectively, from the irradiation temperature dependence of the density and the growth rate of loops. [References: 17]
机译:我们已经研究了使用高压电子显微镜(HVEM)在电子辐照下Zircaloys(Zrys)中位错环的形成和生长过程。位错回路对于燃料包壳的降解现象非常重要,例如辐射增长和轻水反应堆的延展性降低。在HVEM中,在320 K至970 K的温度下,用1 MeV电子辐照三种Zircaloys(Zry-2,Zry-4和改良Zry-2)的TEM标本。 Burgers向量b = 1/3 <[11(2)over bar 0]>的间隙型位错环在辐照开始时形成在棱锥或棱柱面上。已经发现,这些环的成核和生长过程遵循基于双间隙模型的动力学,其中双间隙充当间隙位错环的核。基于此模型;从辐照温度对环的密度和环的生长速度的依赖性,确定间隙和空位的迁移能分别为0.15-0.22 eV和1.0-1.2 eV。 [参考:17]

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