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首页> 外文期刊>Journal of Nanoparticle Research >Removal of 10-nm contaminant particles from Si wafers using argon bullet particles
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Removal of 10-nm contaminant particles from Si wafers using argon bullet particles

机译:使用氩子弹颗粒去除Si晶片上的10 nm污染物颗粒

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摘要

Removal of nanometer-sized contaminant particles (CPs) from substrates is essential to successful fabrication of nano scale devices. But the cleaning limit of various current technologies stay around 50 nm. Cryogenic aerosol beam has long been successfully employed to remove CPs down to 50 nm, and supersonic particle beam using particles smaller than 100 nm lowered the limit of cleaning down to 20 nm size. In this study, the particle beam technique that uses nanometer-sized bullet particles moving at supersonic velocity was improved, and successfully employed to remove contaminant particles as small as 10 nm. Ar nano-bullets of about 20–50 nm were generated by gas-phase nucleation, and growth in a supersonic nozzle: appropriate size and velocity of the nano-bullets were obtained by optimizing the Ar/He mixture fraction and nozzle contours. Cleaning efficiency >95% was attained. Nano-bullet velocity was found to be the most important parameter affecting removal of contaminant particles in the 10-nm size range.
机译:从基板上去除纳米级污染物颗粒(CP)对于成功制造纳米级器件至关重要。但是目前各种技术的清洁极限保持在50 nm左右。低温气溶胶束长期以来一直成功用于去除低至50 nm的CP,而使用小于100 nm的粒子的超音速粒子束降低了清洁至20 nm尺寸的极限。在这项研究中,改进了使用超音速运动的纳米级子弹粒子的粒子束技术,并成功地用于去除小至10 nm的污染物粒子。气相成核作用产生约20–50 nm的Ar纳米球,并在超音速喷嘴中生长:通过优化Ar / He混合比和喷嘴轮廓获得适当大小和速度的纳米球。清洁效率> 95%。发现纳米子弹速度是影响10 nm尺寸范围内污染物颗粒去除的最重要参数。

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