Explicit Quantum Drain Current Model for Symmetric Double Gate MOSFETs

摘要

In this article, an analytical model for Double gate Metal Oxide Semiconductor Field Effect Transistor (DG MOSFET) is developed including Quantum effects. The Schrodinger-Poisson' s equation is used to develop the analytical Quantum model using Variational method. A mathematical expression for inversion charge density is obtained and the model was developed with quantum effects by means of oxide capacitance for different channel thickness and gate oxide thickness. Based on inversion charge density model the compact model is developed for transfer characteristics, transconductance and C-V curves of DG MOSFETs. The results of the model are compared to the simulated results. The comparison shows the accuracy of the proposed model.