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首页> 外文期刊>Journal of Materials Science >The effects of CuO-doping on dielectric and piezoelectric properties of Bi0.5Na0.5TiO3–Ba(Zr,Ti)O3 lead-free ceramics
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The effects of CuO-doping on dielectric and piezoelectric properties of Bi0.5Na0.5TiO3–Ba(Zr,Ti)O3 lead-free ceramics

机译:CuO掺杂对Bi0.5 Na0.5 TiO3 –Ba(Zr,Ti)O3 无铅陶瓷介电和压电性能的影响

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摘要

CuO-doped lead-free ceramics based on bismuth sodium titanate (Bi0.5Na0.5TiO3, BNT) and barium zirconate titanate (Ba(Zr0.07Ti0.93)O3, BZT) were prepared via a multi-step solid-state reaction process. The BNT–BZT with CuO dopant ceramics sintered at 1150–1180 °C for 2 h in air showed a pure perovskite structure. SEM images reveal that a small amount of CuO (<2 mol%) play a significant role on the microstructure to improve its sintering attributes, while it will degrade when the dopant is added beyond 2 mol%. The dielectric and piezoelectric properties of CuO-doped BNT–BZT ceramics were evaluated. At room temperature, the sample doped with 2 mol% CuO shows quite good properties such as a high piezoelectric constant (d 33 ~156.5 pC/N) and a high electromechanical coupling factor (k t ~52%). The depolarization temperature increased dramatically and the maximum permittivity temperature decreased slightly.
机译:基于钛酸铋钠(Bi0.5 Na0.5 TiO3 ,BNT)和锆钛酸钡(Ba(Zr0.07 Ti0)的CuO掺杂无铅陶瓷.93 )O3 ,BZT)是通过多步固态反应过程制备的。含CuO掺杂陶瓷的BNT–BZT在1150–1180°C的空气中烧结2 h,显示出纯钙钛矿结构。 SEM图像表明,少量的CuO(<2 mol%)在微观结构上起着重要的作用,以改善其烧结性能,而当掺杂量超过2 mol%时,CuO则会降解。评估了掺杂CuO的BNT-BZT陶瓷的介电和压电性能。在室温下,掺杂2 mol%CuO的样品表现出很好的性能,例如高压电常数(d 33 〜156.5 pC / N)和高机电耦合因子(kt 〜52%)。 )。去极化温度急剧上升,最高介电常数温度略有下降。

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  • 来源
    《Journal of Materials Science》 |2007年第23期|9750-9755|共6页
  • 作者单位

    Department of Applied Physics Curtin University of Technology GPO Box U 1987 Perth 6845 WA Australia;

    Department of Applied Physics and Materials Research Center The Hong Kong Polytechnic University Hung Hom Kowloon Hong Kong China;

    Department of Applied Physics and Materials Research Center The Hong Kong Polytechnic University Hung Hom Kowloon Hong Kong China;

    Department of Applied Physics Curtin University of Technology GPO Box U 1987 Perth 6845 WA Australia;

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