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Highly textured La2Zr2O7 and CeO2 buffer layers by ink jet printing for coated conductors

机译:喷墨印刷涂覆导体的高织构La2 Zr2 O7 和CeO2 缓冲层

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摘要

The objective of this paper is to prove the possibility to produce single side buffered substrates for coated conductors. We report for the first time the production of highly textured NiW/La2Zr2O7/CeO2 system by all-chemical solution deposition means using an in-house built drop-on-demand ink-jet printer. Lanthanum zirconate precursor ink was produced using lanthanum acetate and zirconium n-propoxide modified with propionic and acetic acid, respectively, and diluted with methanol. Cerium oxide precursor ink was prepared using cerium acetylacetonate dissolved in acetylacetone and diluted in methanol. Optimized ink jet control parameters (inter-droplet distance, nozzle opening time and pressure in the chamber) allowed the deposition of homogeneous highly textured films with a thickness of approximately 150–200 nm at speeds as high as 27 cm/min. La2Zr2O7 film showed in plane and out of plane misalignment of 6.6° and 7.4°, respectively, whereas values obtained for CeO2 were 7.8° and 8.1°, respectively. This study represents a step forward in the production of reel-to-reel coated conductors in an efficient and economic way.
机译:本文的目的是证明生产带涂层导体单面缓冲基板的可能性。我们首次报告了使用内部内置液滴的全化学溶液沉积方法生产高度织构的NiW / La2 Zr2 O7 / CeO2 系统的过程。按需喷墨打印机。分别使用乙酸和镧分别用丙酸和乙酸改性并用甲醇稀释的乙酸镧和正丙醇锆生产锆酸镧前体油墨。使用溶解在乙酰丙酮中并稀释在甲醇中的乙酰丙酮铈制备氧化铈前体墨水。优化的喷墨控制参数(墨滴间距离,喷嘴打开时间和腔内压力)允许以高达27 cm / min的速度沉积厚度约为150-200 nm的均质高纹理膜。 La2 Zr2 O7 膜在平面内和平面外的未对准分别为6.6°和7.4°,而CeO2 的值分别为7.8°和8.1° 。这项研究代表了以有效且经济的方式生产卷对卷涂层导体的一步。

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  • 来源
    《Journal of Materials Science》 |2007年第17期|7129-7134|共6页
  • 作者单位

    Department of Materials Science and Metallurgy University of Cambridge Pembroke Street Cambridge CB2 3QZ UK;

    Department of Materials Science and Metallurgy University of Cambridge Pembroke Street Cambridge CB2 3QZ UK;

    Department of Materials Science and Metallurgy University of Cambridge Pembroke Street Cambridge CB2 3QZ UK;

    Trithor Ltd Heisenbergstr.16 53359 Rheinbach Germany;

    PFampampU Mineral Development ApS Kullinggade 31 Svendborg 5700 Denmark;

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  • 入库时间 2022-08-18 02:22:44

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