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Surface form memory by indentation and planarization of NiTi: displacements and mechanical energy density during constrained recovery

机译:通过NiTi的压痕和平面化进行表面形状记忆:受约束的恢复过程中的位移和机械能密度

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摘要

Indentation-induced two-way shape memory leads to pronounced temperature dependence of the depth of spherical indents made in martensitic NiTi shape-memory alloys. They are shallower when austenitic, and depth varies during both M → A and A → M transformations. If the impression is planarized, by metallographic grinding at T M f , a protrusion rises at the site when warmed past A f . If cooled again this “exdent” retreats, restoring optical flatness. The cycle is repeatable, and exdent heights can exceed 15% of prior indent depth. Since it maps between macroscopically distinguishable topographies, or forms, at orders greater length scale than the surface roughness, we call the effect “surface form memory”—SFM. Notable regarding potential applications is that, when loaded in compression by planar contact with a strong base metal, exdents exert sufficient pressure to indent the latter, suggesting that subsurface transformational mechanisms operate at volumetric work-energy densities 107 J/m3, fully ~10% of the M → A enthalpy.
机译:压痕诱导的双向形状记忆导致马氏体NiTi形状记忆合金中球形凹痕深度的明显温度依赖性。奥氏体时它们变浅,并且深度在M→A和A→M转换过程中都会变化。如果压痕是平整的,则通过在T 处进行金相研磨,当温度超过A f 时,该部位会出现突起。如果再次冷却,则该“大量”退缩,恢复了光学平坦度。该循环是可重复的,并且极限高度可以超过先前的极限深度的15%。因为它在宏观上可区分的地形或形状之间进行映射,并且长度尺度比表面粗糙度大几个数量级,所以我们将这种效应称为“表面形式记忆”-SFM。在潜在的应用方面值得注意的是,当通过与强碱金属进行平面接触而承受压缩载荷时,屈伸物会施加足够的压力使后者缩进,这表明地下转化机制在体积功能密度> 107 J / m3的情况下起作用。 ,大约是M→焓的10%。

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  • 来源
    《Journal of Materials Science》 |2011年第23期|p.7401-7409|共9页
  • 作者单位

    Department of Chemical Engineering and Materials Science, Michigan State University, East Lansing, MI, 48824, USA;

    Department of Chemical Engineering and Materials Science, Michigan State University, East Lansing, MI, 48824, USA;

    Department of Chemical Engineering and Materials Science, Michigan State University, East Lansing, MI, 48824, USA;

    Department of Chemical and Materials Engineering, University of Kentucky, Lexington, KY, 40506, USA;

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