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首页> 外文期刊>Journal of materials science >PVDF composites filled with core-shell fillers of Si@SiO_2, Si@SiO_2@PS: effects of multiple shells on dielectric properties and thermal conductivity
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PVDF composites filled with core-shell fillers of Si@SiO_2, Si@SiO_2@PS: effects of multiple shells on dielectric properties and thermal conductivity

机译:PVDF复合材料填充有Si @ SiO_2,SI @ Si @ Si @ PS的核 - 壳填料:多个壳体对电介质性能和导热性的影响

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摘要

Exploring polymer composites with a high dielectric constant (ε') and breakdown strength (E_b), low dissipation factor (tanδ), as well as a high thermal conductivity (TC) is of crucially important thanks to their potential applications in modern electronics. Herein, in this paper, two kinds of core-shell-structured Si particles, i.e., Si@SiO_2, Si@SiO_2@PS, were prepared by high temperature oxidation and polystyrene (PS) coating and incorporated into PVDF (poly(vinylidene fluoride)). The results indicate that both the fillers' kinds and loading have obvious influences on dielectric and thermal properties of the composites. The SiO_2 interlayer between the Si and PVDF matrix remarkably suppresses the loss and reduces leakage conductivity, whereas encapsulation of Si@SiO_2 with a PS shell further inhibits the loss and conductivity, and the organic PS interlayer enhances the interfacial compatibility and promotes the fillers' homogeneous dispersion in PVDF, therefore improving the E_b of the composites. More importantly, the PVDF composites with 50 wt.% of Si@SiO_2@PS show good comprehensive performances: ε' of 66.6 but tanδ of 0.04 at 100 Hz, E_b of 2.48 kV/mm as well as a high TC of 1.0 W/m K. The prepared Si@SiO_2@PS/PVDF composites show promising potential applications in microelectronics and electrical industries.
机译:探索具有高介电常数(ε')和击穿强度(E_B)的聚合物复合材料,低耗散因子(Tanδ)以及高导热率(TC)非常重要,因为它们在现代电子设备中的潜在应用。在此,本文通过高温氧化和聚苯乙烯(PS)涂层制备了两种核 - 壳结构化Si颗粒,即Si / 2,Si / 2 @ Ps,并掺入PVDF中(聚(偏二氟乙烯) )))。结果表明,填充剂种类和负载都对复合材料的电介质和热性能具有明显的影响。 Si和PVDF基质之间的SiO_2中间层显着抑制损耗并降低泄漏导电性,而使用PS壳的Si @ SiO_2的封装进一步抑制损失和导电性,并且有机PS中间层增强了界面相容性并促进填充物的均匀性PVDF中的分散,因此改善了复合材料的E_B。更重要的是,PVDF复合材料,具有50重量%的SI @ SIO_2 @ PS的百分比显示出良好的综合性能:ε'为66.6,但TANδ为0.04,e_b为2.48 kV / mm,高于1.0w / mm的高Tc。 M K.制备的Si @ SiO_2 @ PS / PVDF复合材料在微电子和电气工业中显示出具有很有可能的潜在应用。

著录项

  • 来源
    《Journal of materials science》 |2021年第18期|23429-23444|共16页
  • 作者单位

    School of Chemistry and Chemical Engineering Xi'an University of Science and Technology Xi'an 710054 China;

    School of Chemistry and Chemical Engineering Xi'an University of Science and Technology Xi'an 710054 China;

    School of Chemistry and Chemical Engineering Xi'an University of Science and Technology Xi'an 710054 China;

    School of Materials Science and Engineering Xi'an University of Science and Technology Xi'an 710054 China;

    School of Chemistry and Chemical Engineering Xi'an University of Science and Technology Xi'an 710054 China;

    School of Chemistry and Chemical Engineering Xi'an University of Science and Technology Xi'an 710054 China;

    School of Chemistry and Chemical Engineering Xi'an University of Science and Technology Xi'an 710054 China;

    School of Chemistry and Chemical Engineering Xi'an University of Science and Technology Xi'an 710054 China;

    School of Chemistry and Chemical Engineering Xi'an University of Science and Technology Xi'an 710054 China;

    School of Chemistry and Chemical Engineering Xi'an University of Science and Technology Xi'an 710054 China;

    School of Physical Science and Technology Suzhou University of Science and Technology Suzhou 215009 China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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