Study on resistance switching characteristics and regulation mechanisms of Bi_(0.9)Er_(0.1)Fe_(0.99)Mn_(0.01)O_3/Zn_(1-x)Cu_xO thin films

摘要

The carrier transport, ferroelectric and resistance switching properties of Bi_(0.9-) Er_(0.1)Fe_(0.99)Mn_(0.01)O_3/Zn_(1-x)Cu_xO (BEFM/ZCu_xO, x = 0.00-0.09) composite films were studied to elucidate the correlation between ferroelectricity and resistance switching and the formation mechanism of resistance switching behavior. BEFM/ZCu_xO films are a combination of bulk conduction and interfacial conduction, and interface conduction is dominant. The BEFM/ZnO thin film exhibits a rectifying diode effect, and BEFM can regulate the carrier transport at the interface through ferroelectric polarization to achieve the regulation of resistance state. However, the ferroelectricity of the BEFM/ZCu_xO composite films has almost disappeared, and its resistance switching behavior can be achieved by adjusting the change of the interface barrier through the transport of oxygen vacancies. The resistance switching effect of BEFM/ZCu_xO composite films may have potential applications in the field of non-volatile storage and multifunction storage.