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Influence of swift heavy ion irradiation on sensing properties of nickel-(NRs-Ni_3HHTP_2) metal-organic framework

机译:SWIFT重离子辐射对镍 - (NRS-NI_3HHTP_2)金属 - 有机框架感应性质的影响

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摘要

Repercussion of Swift Heavy Ion (SHI) irradiation on nickel-based nanorods of Metal-Organic Framework (NRs-Ni_3HHTP_2 MOF) for enhancement in the properties of ChemFET-based gas sensor has been investigated. Nanorods of Ni_3HHTP_2-MOF were synthesized by chemical method and exposed to C~(12+) ions irradiation with fluence 1×10~(11) ion/cm~2 and 1 × 10~(12) ion/cm~2. The structural, spectroscopic, morphological, and optical characterizations were carried out using x-ray diffraction (XRD), fourier transfer infrared spectroscopy (FTIR), atomic force microscopy (AFM) with scanning electron microscopy (SEM), and UV-visible spectroscopy, respectively, whereas the bandgap was calculated from the Tauc's plot. The synthesized nanorods of Ni_3HHTP_2 MOF were drop-casted on gold-coated microelectrodes on silicon/silicon dioxide (Si/SiO_2) substrate, where silicon layer serves as a gate and gold microelectrodes on silicon/silicon dioxide (Si/SiO_2) substrate as a source and drain. The transmutations in material properties due to SHI irradiations were serviceable for enhancing field-effect transistor (transfer and output) properties and sensing properties. After Swift Heavy Ion (SHI) irradiation (1 × 10~(11) ion/cm~2), it shows excellent response and recovery time i.e., 20 and 23 s, respectively, for 1 ppm SO_2 concentration at room temp (RT) with a lower detection limit of 0.625 ppm.
机译:研究了Swift重离子(Shi)辐射对基于金属 - 有机骨架的镍的纳米棒(NRS-NI_3HTP_2MOF)的辐照,用于增强ChemFET基气体传感器的性能。通过化学方法合成NI_3HHTP_2-MOF的纳米棒,并通过流量为1×10〜(11)离子/ cm〜2和1×10〜(12)离子/ cm〜2的照射至C〜(12+)离子辐照。使用X射线衍射(XRD),傅里叶转移红外光谱(FTIR),原子力显微镜(AFM),用扫描电子显微镜(SEM)和UV可见光谱,进行结构,光谱,形态和光学表征,分别是从Tauc的绘图计算的带隙。 Ni_3HTP_2MOF的合成纳米棒在硅/二氧化硅(Si / SiOx2)衬底上的镀金微电极上丢弃,其中硅层用作硅/二氧化硅(Si / Si / SiO 10)衬底上的栅极和金微电极作为a来源和排水管。由于SHI照射引起的材料特性的差异可用于增强场效应晶体管(转移和输出)性质和感测性质。快速重离子(SHI)照射(1×10〜(11)离子/ cm〜2)后,它分别显示出优异的响应和恢复时间,即20和23s,分别在室温下为1ppm SO_2浓度(RT)检测限为0.625ppm的较低。

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  • 来源
    《Journal of materials science》 |2021年第14期|18657-18668|共12页
  • 作者单位

    RUSA Centre for Advanced Sensor Technology Department of Physics Dr. Babasaheb Ambedkar Marathwada University Aurangabad MS 431004 India;

    Department of Electronics & Telecommunication Engineering Jawaharlal Nehru Engineering College Aurangabad MS 431 001 India;

    RUSA Centre for Advanced Sensor Technology Department of Physics Dr. Babasaheb Ambedkar Marathwada University Aurangabad MS 431004 India;

    RUSA Centre for Advanced Sensor Technology Department of Physics Dr. Babasaheb Ambedkar Marathwada University Aurangabad MS 431004 India;

    RUSA Centre for Advanced Sensor Technology Department of Physics Dr. Babasaheb Ambedkar Marathwada University Aurangabad MS 431004 India;

    RUSA Centre for Advanced Sensor Technology Department of Physics Dr. Babasaheb Ambedkar Marathwada University Aurangabad MS 431004 India;

    RUSA Centre for Advanced Sensor Technology Department of Physics Dr. Babasaheb Ambedkar Marathwada University Aurangabad MS 431004 India;

    Inter University Accelerator Centre (IUAC) New Delhi 110 067 India;

    RUSA Centre for Advanced Sensor Technology Department of Physics Dr. Babasaheb Ambedkar Marathwada University Aurangabad MS 431004 India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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