The enhancement of energy storage performances via combining relaxor behaviors with the crucial point of solubility limit

摘要

(l-x)(0.96Na_(0.5)Bi_(0.5)TiO_3-0.04BiMnO_3)-xLaMnO_3 ternary solid solution films were fabricated by Sol-gel methods. It takes advantage of the large polarization from 0.96NBT-0.04BMO limit solid solution at crucial point of solubility limit to enhance energy density. And LaMnO_3 was introduced to improve the energy storage efficiency via the enhancement of relaxor behaviors. It is shown that the relaxor behaviors had been enhanced, and a large energy storage density of 87.9 J/cm~3 and efficiency of 56.5% were achieved for 0.85(NBT-BMO)-0.15LM films, with increase ratio of 4.9% and 13.3% respectively than 0.96NBT-0.04BMO solubility limit films. However, when LaMnO_3 is beyond a certain limit, the breakdown strength is reduced due to the formation of the current channel. Thus it suggests a alternative method that combining relaxor behaviors with solubility limit films, which provides a way to regulate the energy storage performances for film capacitors.