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首页> 外文期刊>Journal of materials science >Current-perpendicular-to-plane giant magnetoresistance in Co/Cu multilayered nanocylinders electrodeposited into anodized aluminum oxide nanochannels with ultra-large aspect ratio
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Current-perpendicular-to-plane giant magnetoresistance in Co/Cu multilayered nanocylinders electrodeposited into anodized aluminum oxide nanochannels with ultra-large aspect ratio

机译:Co / Cu多层纳米纤维蛋白的电流垂直于平面巨型磁阻电沉积到具有超大纵横比的阳极氧化铝氧化铝纳米中

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摘要

An anodized aluminum oxide (AAO) thick film with numerous nanochannels was synthesized by a cathodic exfoliation technique from a metallic aluminum rod. The nanochannel diameter D and length L were about 60 nm and 60 μm, respectively. The aspect ratio L/D reached ~ 1000. A rectangular pulsed potential deposition technique was applied to electrochemically grow the multilayered nanocylinders with alternating Cu and Co thin layers in the AAO nanochannels. The Co/Cu bilayer thickness was decreased to around 7 nm at the minimum by controlling the pulsed potential and duty cycle during the electrodeposition process. An electrochemical in situ single contact process was demonstrated by monitoring the observed current until a Co/Cu multilayered nanocylinder reached the nanoporous Au film on the AAO thick film. The resistance of the Co/Cu multilayered nanocylinder was determined to range from 1 to 2 kΩ, which corresponded well with a theoretical estimation. Current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) of a Co/Cu multilayered nanocylinder with ~ 6000 bilayers (Cu = 2.4 nm, Co = 7.1 nm) reached up to 31.5% at room temperature. Valet-Fert model agreed well with the present study concerning the effect of Cu-layer thickness on CPP-GMR.
机译:通过来自金属铝棒的阴极剥离技术合成了具有许多纳米的阳极氧化铝(AaO)厚膜。纳米通道直径D和长度L分别为约60nm和60μm。纵横比L / D达到〜1000.施加矩形脉冲电位沉积技术,用AaO纳米纳米中的交替Cu和Co薄层电化学生长多层纳米纤胺。通过在电沉积过程中控制脉冲电位和占空比,Co / Cu双层厚度在最小下降至约7nm。通过监测观察到的电流来证明在原位单接触过程中的电化学,直到Co / Cu多层纳米粘机达到AaO厚膜上的纳米多孔Au膜。将Co / Cu多层纳米碳镍的电阻确定为1至2kΩ的范围,其对应于理论估计。具有〜6000双层(Cu = 2.4nm,Co = 7.1nm)的Co / Cu多层纳米粘码的电流垂直于平面巨磁阻(CPP-GMR)在室温下达到高达31.5%。 VALET-FATT模型与本研究相同,关于CU层厚度对CPP-GMR的影响。

著录项

  • 来源
    《Journal of materials science 》 |2021年第8期| 10089-10100| 共12页
  • 作者单位

    Graduate School of Engineering Nagasaki University 1-14 Bunkyo-machi Nagasaki 852-8521 Japan;

    Faculty of Engineering Nagasaki University 1-14 Bunkyo-machi Nagasaki 852-8521 Japan;

    Faculty of Engineering Nagasaki University 1-14 Bunkyo-machi Nagasaki 852-8521 Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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