XRD, CHNSO, fluorescence, filter-influx, NLO, photoconductivity, hardness and helical spring- fabricated device stress analysis of 2′-chloro-4- methoxy-3-nitrobenzil (CMNB) crystal of different scalings for opto-electronic filter and band gap engineering utilities

摘要

2′-Chloro-4-methoxy-3-nitrobenzil (CMNB) crystals are grown by solution growth method, and organic crystalline materials are utilized due to their enhanced applications as frequency multipliers, phase matched equipments, etc. CMNB is utilized in electronic and mechanical sectors based on the filter, fluorescence (FL), tribological and also by NLO studies. The single crystal X-ray diffraction (XRD) of CMNB shows the formula as C_(15)H_(10)CINO_5 and the lattice parameters are a = 7.8560 Å, b = 8.1005 Å, c = 12.4964 Å, α = 74.90°, β = 74.81°, γ = 68.59°, crystalline system is triclinic, space group as PI. Here, the crystals are analyzed with XRD, CHNSO, fluorescence (FL), filter influx, NLO, hardness and photoconductivity nature and also for fabricated device stress analysis methods by surface interaction tool as a mechano utility in instrumental industries.