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首页> 外文期刊>Journal of materials science >Morphology regulation of TiO_2 thin film by ALD growth temperature and its applications to encapsulation and light extraction
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Morphology regulation of TiO_2 thin film by ALD growth temperature and its applications to encapsulation and light extraction

机译:ALD生长温度的TiO_2薄膜形态调节及其在封装和光提取中的应用

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摘要

As a multi-functional material, TiO_2 thin film has been widely studied and applied in display, photocatalysis, solar cells and other fields. In this work, TiO_2 thin films were prepared using atomic layer deposition, and their morphology was successfully regulated by the growth temperature. It was found that TiO_2 film prepared at low temperature was amorphous, uniform and dense, with great barrier property, which can be used for encapsulation. Crystalline TiO_2 nanoparticles with anatase phase appeared at higher temperature than 150 °C, whose amount increased with the growth temperature. The crystalline TiO_2 particles can be used as templates to prepare randomly textured nano-patterns, which were proved to be able to improve the light extraction efficiency of photoelectric devices. Specifically, the luminance efficiency of the QLED with the nano-patterns formed by the crystalline TiO_2 particle prepared at 200 °C and 250 °C were increased by 24.07% and 30.44%, respectively.
机译:作为一种多功能材料,TiO_2薄膜已被广泛研究和应用于显示器,光催化,太阳能电池和其他领域。在这项工作中,使用原子层沉积制备TiO_2薄膜,并通过生长温度成功调节它们的形态。发现在低温下制备的TiO_2薄膜是无定形的,均匀和致密,具有极大的阻隔性,可用于包封。结晶TiO_2具有锐钛矿相的纳米颗粒出现在较高温度高于150℃的温度下,其量随着生长温度而增加。结晶TiO_2颗粒可以用作模板以制备随机纹理的纳米图案,这被证明能够提高光电装置的光提取效率。具体地,Q0具有由200℃和250℃制备的结晶TiO_2颗粒形成的纳米图案的亮度效率分别增加了24.07%和30.44%。

著录项

  • 来源
    《Journal of materials science 》 |2020年第23期| 21316-21324| 共9页
  • 作者单位

    College of Physics and Information Engineering Fuzhou University Fuzhou 350116 Fujian People's Republic of China;

    College of Physics and Information Engineering Fuzhou University Fuzhou 350116 Fujian People's Republic of China;

    College of Physics and Information Engineering Fuzhou University Fuzhou 350116 Fujian People's Republic of China;

    College of Physics and Information Engineering Fuzhou University Fuzhou 350116 Fujian People's Republic of China;

    College of Physics and Information Engineering Fuzhou University Fuzhou 350116 Fujian People's Republic of China Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China Fuzhou 350116 Fujian People's Republic of China;

    College of Physics and Information Engineering Fuzhou University Fuzhou 350116 Fujian People's Republic of China Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China Fuzhou 350116 Fujian People's Republic of China;

    College of Physics and Information Engineering Fuzhou University Fuzhou 350116 Fujian People's Republic of China Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China Fuzhou 350116 Fujian People's Republic of China;

    College of Physics and Information Engineering Fuzhou University Fuzhou 350116 Fujian People's Republic of China Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China Fuzhou 350116 Fujian People's Republic of China;

    College of Physics and Information Engineering Fuzhou University Fuzhou 350116 Fujian People's Republic of China Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China Fuzhou 350116 Fujian People's Republic of China;

    College of Physics and Information Engineering Fuzhou University Fuzhou 350116 Fujian People's Republic of China Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China Fuzhou 350116 Fujian People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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