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首页> 外文期刊>Journal of materials science >Effect of manganese doping on the structural, morphological, optical, electrical, and magnetic properties of BaSnO_3
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Effect of manganese doping on the structural, morphological, optical, electrical, and magnetic properties of BaSnO_3

机译:锰掺杂对Basno_3结构,形态学,光学,电气和磁性的影响

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摘要

ABO_3 perovskites show unusual property modifications by proper substitution at the A and B sites. Polycrystalline perovskite BaSnO_3 samples doped with different concentrations of manganese (BaSn_(1-x)Mn_xO_3) were synthesized by solid-state reaction method. Rietveld refinement of XRD analysis confirmed the structure and phase purity of the synthesized compound. Diamagnetic-to-paramagnetic transition and optical bandgap tuning indicate the substitutional effect of Mn in the host BaSnO_3 lattice. The strong reverse saturable absorption of the synthesized samples makes them ideal candidate for optical limiting applications. The frequency and composition-dependent dielectric studies reveal that Mn-doped BaSn_(1-x)Mn_xO_3 can be used for high-frequency device applications. The cycling retention in the specific capacitance of 96.2% at a current density of 25 mA/g even after 2500 cycles in Mn-doped BaSnO_3 electrode can be used in energy storage devices for super-capacitor applications.
机译:ABO_3 PEROVSKITES通过A和B站点的适当替换来显示异常的财产修改。通过固态反应方法合成掺杂有不同浓度的锰(BasN_(1-X)Mn_XO_3)的多晶钙钛矿BasnO_3样品。 RIETVELD改进XRD分析证实了合成化合物的结构和相纯度。硫磁性到顺磁的过渡和光学带隙调谐表明Mn在主机Basno_3格中的替换作用。合成样品的强烈反向可饱和吸收使其成为光学限制应用的理想候选者。频率和组成依赖性介电研究表明,Mn掺杂Basn_(1-x)Mn_xO_3可用于高频设备应用。即使在MN掺杂BasnO_3电极中2500次循环之后,电流密度为96.2%的特定电容的循环保留也可用于超电容器应用的能量存储装置。

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  • 来源
    《Journal of materials science》 |2020年第14期|11159-11176|共18页
  • 作者单位

    Department of Optoelectronics University of Kerala Kariavattom Thiruvanthapuram Kerala 695581 India;

    Thin Film Laboratory Department of Physics Sri Venkateswara University Tirupati 517502 India;

    Department of Optoelectronics University of Kerala Kariavattom Thiruvanthapuram Kerala 695581 India Department of Electronics SreeAyyappa College Eramallikkara Chengannur Kerala India;

    Dept. of Physics University of Kerala Kariavattom Thiruvanthapuram Kerala 695581 India;

    Dept. of Physics University of Kerala Kariavattom Thiruvanthapuram Kerala 695581 India;

    Thin Film Laboratory Department of Physics Sri Venkateswara University Tirupati 517502 India;

    Light and Matter Physics Group Raman Research Institute Bangalore 560080 India;

    Department of Optoelectronics University of Kerala Kariavattom Thiruvanthapuram Kerala 695581 India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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