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首页> 外文期刊>Journal of materials science >Zinc oxide nanostructure-based textile pressure sensor for wearable applications
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Zinc oxide nanostructure-based textile pressure sensor for wearable applications

机译:氧化锌纳米结构的纺织压力传感器用于可穿戴应用

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摘要

Wearable textile pressure sensors with piezoelectric properties are a very effective way of detecting movements of the human body based on the force exerted by the sensor. Owing to the merits of flexibility and breathability, the textile pressure sensor finds potential application in biomedical monitoring and human-machine interaction. The textile pressure sensor works on the principle of piezoelectricity where an electrode of conductive woven fabric forms the outer layer and a semi-conductive material such as ZnO is sandwiched between two conductive layers. ZnO is prepared using a simple hydrothermal method and SEM. XRD are two effective methods to detect the presence of ZnO on the conductive fabric. The pressure applied on the fabric is translated into voltage and the output voltages are compared using two samples of ZnO nanostructures. The effect of the seed layer is investigated under identical growth and measurement which influences the output performance of voltage. This property can be used to change the sensitivity and working range of pressure sensor for specific applications. The pressure sensor designed can be sewn directly onto the clothing which conforms to the human body's flexible curved surface.
机译:具有压电性能的可穿戴纺织压力传感器是基于传感器施加的力检测人体的运动的非常有效的方法。由于灵活性和透气性的优点,纺织压力传感器在生物医学监测和人机相互作用中发现了潜在的应用。纺织压力传感器适用于压电性的原理,其中导电织物的电极形成外层,诸如ZnO的半导体材料夹在两个导电层之间。使用简单的水热法和SEM制备ZnO。 XRD是检测导电织物上的ZnO存在的两种有效方法。在织物上施加的压力被平移到电压中,并使用两个ZnO纳米结构样品进行比较输出电压。在相同的生长和测量下研究了种子层的效果,这会影响电压的输出性能。此属性可用于改变特定应用的压力传感器的灵敏度和工作范围。设计的压力传感器可以直接缝合到符合人体柔性弯曲表面的衣服上。

著录项

  • 来源
    《Journal of materials science》 |2020年第19期|16519-16530|共12页
  • 作者单位

    Department of Electronics and Communication Engineering Sri Sivasubramaniya Nadar College of Engineering. Chennai. TN 6031 10. India;

    Department of Electronics and Communication Engineering Sri Sivasubramaniya Nadar College of Engineering. Chennai. TN 6031 10. India;

    Department of Electronics and Communication Engineering Sri Sivasubramaniya Nadar College of Engineering. Chennai. TN 6031 10. India;

    Department of Electronics and Communication Engineering Sri Sivasubramaniya Nadar College of Engineering. Chennai. TN 6031 10. India;

    Department of Electronics and Communication Engineering Sri Sivasubramaniya Nadar College of Engineering. Chennai. TN 6031 10. India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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