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首页> 外文期刊>Journal of materials science >Effects of hydrogen annealing on the structural, optical and electrical properties of indium-doped zinc oxide films
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Effects of hydrogen annealing on the structural, optical and electrical properties of indium-doped zinc oxide films

机译：氢退火对掺铟氧化锌薄膜结构，光学和电学性质的影响

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摘要

Indium-doped zinc oxide (IZO) films were fabricated by radio-frequency magnetron sputtering. The effects of hydrogen annealing on the structural, optical and electrical properties of the IZO films were investigated. The hydrogen annealing may deteriorate the crystallinity of the films. The surfaces of the films would be damaged when the annealing temperature was higher than 350 ℃. After the annealing, the surface roughness of the films would decrease, and high transparency of 80-90% in the visible and near-infrared wavelength would be kept. Meanwhile, the resistivity decreased from 1.25 × 10~(-3) Ωcm of the deposited films to 6.70 × 10~(-4) Ωcm of the annealed films. The work function of the IZO films may be modulated between 4.6 and 4.98 eV by varying the hydrogen annealing temperature and duration.
机译：通过射频磁控溅射制备了铟掺杂氧化锌（IZO）薄膜。研究了氢退火对IZO膜的结构，光学和电学性质的影响。氢退火可能会使膜的结晶度变差。当退火温度高于350℃时，薄膜的表面会被破坏。退火后，膜的表面粗糙度将降低，并且在可见光和近红外波长下将保持80-90％的高透明度。同时，电阻率从沉积膜的1.25×10〜（-3）Ωcm降至退火膜的6.70×10〜（-4）Ωcm。通过改变氢退火温度和持续时间，可以将IZO膜的功函数在4.6和4.98eV之间调节。

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  • 来源
    《Journal of materials science》 |2010年第11期|p.1221-1227|共7页
  • 作者

    Changgang Huang; Meili Wang; Zhonghua Deng; Yongge Cao; Quanlin Liu; Zhi Huang; Yuan Liu; Wang Guo; Qiufeng Huang;

  • 作者单位

    School of Materials Science and Engineering, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, 100083 Beijing, People's Republic of China;

    rnKey Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, 350002 Fuzhou, Fujian, People's Republic of China;

    rnKey Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, 350002 Fuzhou, Fujian, People's Republic of China;

    rnKey Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, 350002 Fuzhou, Fujian, People's Republic of China;

    rnSchool of Materials Science and Engineering, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, 100083 Beijing, People's Republic of China;

    rnKey Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, 350002 Fuzhou, Fujian, People's Republic of China;

    rnKey Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, 350002 Fuzhou, Fujian, People's Republic of China;

    rnKey Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, 350002 Fuzhou, Fujian, People's Republic of China;

    rnKey Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, 350002 Fuzhou, Fujian, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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