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Investigation on electrical and microstructural properties of Thick Film Lead-Free resistor series under various firing conditions

机译:不同烧成条件下厚膜无铅电阻器系列的电和微观结构性能研究

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摘要

The paper presents investigation of four lead free thick film resistor pastes, developed at ITME, denoted R-100, R-1k, R-10k and R-100k with sheet resistivities of 0.1, 1, 10 and 100 kΩ/□, respectively. The resistors were based on RuO_2 as the conductive phase. The aim of the work was to evaluate the influence of firing conditions of the resistive pastes on a sintering process. The pastes were screen printed onto alumina substrate with prefired AgPd lead-free terminations. They were fired at several temperatures from 750 to 950 ℃ for 10 min at peak temperature, as well as fired at the highest temperature for 6 h, in order to bring the sintering process into the equilibrium. The properties of the resistors, i.e , sheet resistivity and temperature coefficient of resistance (TCR), microstructure changes, glass crystallization upon firing, etc., were examined. Dried and fired resistor samples were evaluated by X-Ray diffraction analysis and by the scanning electron microscopy. The RuO_2 conductive phase maintained the same crystal structure regardless of the firing conditions. No devitrification was observed in lead-free resistors glasses. The lattice constants of RuO_2 were uniform after firing at temperatures over 800 ℃. The resistors matched the desired resistivity and the TCR was the least temperature dependent at the firing temperatures around 850 ℃.
机译:本文介绍了由ITME开发的四种无铅厚膜电阻器浆料的研究结果,分别表示为R-100,R-1k,R-10k和R-100k,薄层电阻分别为0.1、1、10和100kΩ/□。电阻器基于RuO_2作为导电相。这项工作的目的是评估电阻浆料的烧成条件对烧结过程的影响。用预烧制的AgPd无铅终端将糊剂丝网印刷到氧化铝基材上。为了使烧结过程达到平衡,将它们在750至950℃的几个温度下于峰值温度下焙烧10分钟,并在最高温度下焙烧6 h。检查了电阻器的特性,即薄层电阻率和电阻温度系数(TCR),微观结构变化,烧成时的玻璃结晶等。通过X射线衍射分析和扫描电子显微镜评估干燥和烧制的电阻器样品。无论焙烧条件如何,RuO_2导电相均保持相同的晶体结构。在无铅电阻器玻璃中未观察到失透。在800℃以上焙烧后,RuO_2的晶格常数均匀。这些电阻器符合所需的电阻率,而在850℃左右的焙烧温度下,TCR对温度的依赖性最小。

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  • 来源
    《Journal of materials science》 |2010年第10期|p.1099-1105|共7页
  • 作者单位

    Institute of Electronic Materials Technology, Warsaw, Poland,Institute of Microelectronic and Optoelectronic, Warsaw University of Technology, Warsaw, Poland;

    rnInstitute of Electronic Materials Technology, Warsaw, Poland,Faculty of Mechatronics, Warsaw University of Technology,Warsaw, Poland;

    rnInstitute of Electronic Materials Technology, Warsaw, Poland;

    rnJozef Stefan Institute, Ljubljana, Slovenia;

    rnJozef Stefan Institute, Ljubljana, Slovenia;

    rnHIPOT RR, Sentjernej, Slovenia;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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