The influence of rapid thermal annealing on electrical and structural properties of Pt/Au Schottky contacts to n-type InP

摘要

The electrical and structural properties of Pt/Au Schottky contacts to n-InP have been investigated in the annealing temperature range of 200-500 ℃ by current-voltage (I-V), capacitance-voltage (C-V), Auger electron spectroscopy (AES) and X-ray diffraction (XRD) measurements. The barrier height of as-deposited Pt/Au Schottky contact is found to be 0.46 eV (I-V) and 0.68 eV (C-V). For the contacts annealed at 300 ℃, the barrier height is increased to 0.51 eV (I-V) 0.89 eV (C-V). Further increase in annealing temperature up to 500 ℃, the barrier height has been found to decrease to 0.49 eV (I-V) 0.82 eV (C-V) from those values obtained at 300 ℃. It has been found that the electrical characteristics are significantly improved for Pt/Au Schottky contacts upon annealing at 300 ℃. Based on the Auger electron spectroscopy and X-ray diffraction results, the formation of Pt-In and Au-In intermetallic compounds at the interface may be the reason for the increase of barrier height after annealing at 300 ℃ for Pt/Au Schottky contacts. From thernatomic force microscopy (AFM) results, it is evident that the surface becomes smooth with RMS roughness of 16.91 nm for the Pt/Au Schottky contacts after annealing at 500 ℃ compared to the 300 ℃ annealed sample (RMS roughness of 17.33 nm).