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首页> 外文期刊>Journal of materials science >Effects of P_2O_5 on sinterability, microstructures and properties of glass/alumina composites
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Effects of P_2O_5 on sinterability, microstructures and properties of glass/alumina composites

机译:P_2O_5对玻璃/氧化铝复合材料烧结性,微观结构和性能的影响

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摘要

We prepared the low-temperature fired glass/ alumina composites and investigated the influence of P_2O_5 on the sinterability, microstructure, dielectric property, and mechanical strength. The result showed that although the nucleating agent P_2O_5 can promote the crystallization of CaO-B_2O_3-SiO_2 (CBS) glass, excessive P_2O_5 have negative effects on the sintering behavior of composites. Because the density decreases gradually with increasing P_2O_5 addition, the dielectric and mechanical properties deteriorate dramatically. The densification mechanism via P_2O_5 modification is revealed further. Due to the crystallization effect of P_2O_5, the increase in viscosity impedes the flowability and wettability of liquid glass, which partly inhibits the liquid-phase sintering. 2 mol% P_2O_5-added CBS glass/alumina composite achieves densification at 900 ℃ (2.79 g/cm~3) and exhibits good performances: low dielectric constant (5.84), low dielectric loss (1.17 × 10~(-3)), and high flexural strength (166 MPa).
机译:我们制备了低温烧制的玻璃/氧化铝复合材料,并研究了P_2O_5对可烧结性,微观结构,介电性能和机械强度的影响。结果表明,尽管成核剂P_2O_5可以促进CaO-B_2O_3-SiO_2(CBS)玻璃的结晶,但是过量的P_2O_5对复合材料的烧结行为有不利影响。由于随着P_2O_5添加量的增加,密度逐渐降低,介电性能和机械性能急剧下降。进一步揭示了通过P_2O_5修饰的致密化机理。由于P_2O_5的结晶作用,粘度的增加阻碍了液态玻璃的流动性和润湿性,从而部分地抑制了液相烧结。添加2 mol%P_2O_5的CBS玻璃/氧化铝复合材料可在900℃(2.79 g / cm〜3)致密化,并具有良好的性能:低介电常数(5.84),低介电损耗(1.17×10〜(-3)),和高抗弯强度(166 MPa)。

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  • 来源
    《Journal of materials science 》 |2011年第8期| p.924-928| 共5页
  • 作者单位

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054 Chengdu, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054 Chengdu, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054 Chengdu, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054 Chengdu, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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