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首页> 外文期刊>Journal of materials science >Low temperature sintering and characteristics of K_2O-B_2O_3-SiO_2-Al_2O_3 glass/ceramic composites for LTCC applications
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Low temperature sintering and characteristics of K_2O-B_2O_3-SiO_2-Al_2O_3 glass/ceramic composites for LTCC applications

机译:LTCC应用的K_2O-B_2O_3-SiO_2-Al_2O_3玻璃/陶瓷复合材料的低温烧结及其特性

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摘要

The K_2O-B_2O_3-SiO_2, K_2O-B_2O_3-SiO_2-2 %Al_2O_3, K_2O-B_2O_3-SiO_2-4 %Al_2O_3 glasses with different Al_2O_3 content were prepared. Different proportions (50, 55, 60, 65, 70 %) of the three glasses were respectively mixed with alumina ceramic-filler, then the mechanical and dielectric properties were investigated. The results showed K_2O-B_2O_3-SiO_2-2 %Al_2O_3 glass/alumina filler (glass:alumina = 60:40) had the excellent comprehensive properties, so further study was continued with part of alumina ceramic-filler replaced by the silica ceramic-filler on this composite. Then the X-ray diffraction analysis revealed that the alumina and silica fillers existed as the crystal phase, and the densification was seriously damaged when the silica content reached to three quarters of the fillers. With the increase of the silica-filler, the composites' density and dielectric constant exhibited uniform decrease, but thermal expansion coefficient (TEC) uniformly increased. When the glass: alumina: silica was equal to 60:30:10, a best composite property was presented as a bulk density of 2.582 (g cm~(-1)), a dielectric constant of 6.1 and a dielectric loss of 2 × 10~(-3) at 1 MHz, a flexural strength of 168 MPa, and a TEC of 8.62 × 10~(-6) ℃~(-1).
机译:制备具有不同Al_2O_3含量的K_2O-B_2O_3-SiO_2,K_2O-B_2O_3-SiO_2-2%Al_2O_3,K_2O-B_2O_3-SiO_2-4%Al_2O_3玻璃。将三种玻璃的不同比例(50%,55%,60%,65%,70%)分别与氧化铝陶瓷填料混合,然后研究其机械性能和介电性能。结果表明K_2O-B_2O_3-SiO_2-2%Al_2O_3玻璃/氧化铝填料(玻璃:氧化铝= 60:40)具有优异的综合性能,因此继续进行进一步研究,用氧化铝陶瓷填料的一部分代替二氧化硅陶瓷填料在这个复合材料上。然后,X射线衍射分析表明,氧化铝和二氧化硅填料以结晶相存在,当二氧化硅含量达到填料的四分之三时,致密化受到严重破坏。随着二氧化硅填料含量的增加,复合材料的密度和介电常数呈现出均匀降低的趋势,而热膨胀系数(TEC)呈现出均匀升高的趋势。当玻璃:氧化铝:二氧化硅等于60:30:10时,最佳复合性能为2.582(g cm〜(-1))的堆积密度,6.1的介电常数和2×的介电损耗1 MHz时为10〜(-3),弯曲强度为168 MPa,TEC为8.62×10〜(-6)℃〜(-1)。

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  • 来源
    《Journal of materials science 》 |2014年第10期| 4187-4192| 共6页
  • 作者单位

    The State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

    The State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

    The State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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