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Effects of Ti doping on structure and microwave absorption properties of Pr_2Fe_(17) alloy

机译:钛掺杂对Pr_2Fe_(17)合金组织和吸波性能的影响

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摘要

The Pr_2Fe_(17-x)Ti_x (x = 0.0, 0.1, 0.2, 0.3, 0.4) powder were prepared by arc smelting and high energy ball milling method. The phase structure, morphology, magnetic properties and electromagnetic parameters of the powders were characterized by X-ray diffraction, scanning electron microscopy, vibrating sample magnetometer and vector network analyzer, respectively. The results indicate that the lattice parameter a and c and unit-cell volume V increase linearly with the increasing amount of Ti doping. The saturation magnetization of the Pr_2Fe_(17-x)Ti_x alloys decreases with the increase of Ti content. The minimum absorption peak frequency shifts towards higher frequency region upon the Ti substitution. And the minimum reflection loss of the Pr_2Fe_(17-x)Ti_x alloys increases with the increase of Ti content. The minimum reflection loss of Pr_2Fe_(16.6)Ti_(0.4) powder reaches about -32.50 dB at 5.36 GHz, and the frequency bandwidth of R < -10 dB reaches about 1.52 GHz with the best matching condition d = 2.5 mm.
机译:通过电弧熔炼和高能球磨法制备了Pr_2Fe_(17-x)Ti_x(x = 0.0、0.1、0.2、0.3、0.4)粉末。分别通过X射线衍射,扫描电子显微镜,振动样品磁强计和矢量网络分析仪对粉末的相结构,形貌,磁性能和电磁参数进行了表征。结果表明,随着Ti掺杂量的增加,晶格参数a和c以及晶胞体积V线性增加。 Pr_2Fe_(17-x)Ti_x合金的饱和磁化强度随Ti含量的增加而降低。 Ti替代后,最小吸收峰频率向更高的频率区域移动。 Pr_2Fe_(17-x)Ti_x合金的最小反射损耗随着Ti含量的增加而增加。 Pr_2Fe_(16.6)Ti_(0.4)粉末的最小反射损耗在5.36 GHz时约为-32.50 dB,R <-10 dB的带宽在最佳匹配条件d = 2.5 mm时约为1.52 GHz。

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  • 来源
    《Journal of materials science》 |2015年第9期|7020-7025|共6页
  • 作者单位

    School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, People's Republic of China,Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin 541004, People's Republic of China;

    School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, People's Republic of China,Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin 541004, People's Republic of China;

    School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, People's Republic of China,Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin 541004, People's Republic of China,School of Materials and Engineering, Central South University, Changsha 410083, People's Republic of China;

    School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, People's Republic of China,Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin 541004, People's Republic of China,School of Materials and Engineering, Central South University, Changsha 410083, People's Republic of China;

    School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, People's Republic of China,Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin 541004, People's Republic of China;

    School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, People's Republic of China;

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  • 正文语种 eng
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