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首页> 外文期刊>Journal of materials science >Improving the electrical, magnetic and antibacterial properties of sol-gel spin coated ZnO thin films through (Sn + Mn) co-doping
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Improving the electrical, magnetic and antibacterial properties of sol-gel spin coated ZnO thin films through (Sn + Mn) co-doping

机译:通过(Sn + Mn)共掺杂改善溶胶-凝胶旋涂ZnO薄膜的电,磁和抗菌性能

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摘要

Sn and Mn co-doped ZnO thin films were deposited onto glass substrates using sol-gel spin coating technique by keeping the Sn doping concentration in the starting solution at 6 at.% and by varying the Mn concentration from 0 to 10 at.% in steps of 2 at.%. The influence of Mn doping on the structural, electrical, optical, photoluminescence, magnetic and surface morphological properties were studied. The antibacterial activity was studied against Staphylococcus aureus bacteria. The structural studies revealed that all the films are grown along the (002) plane, irrespective of the doping concentration. The crystallite size decreases as the doping level is increased. The resistivity is minimum (5.49 × 10~(-3) Ω cm) at 8 at.% of Mn. All the films exhibit good transparency (85 %) in the visible region. The optical band gap of the films is found to be in the range of 3.27-3.41 eV.
机译:通过将起始溶液中的Sn掺杂浓度保持在6 at。%,并将Mn的浓度从0变为10 at。%,使用溶胶-凝胶旋涂技术将Sn和Mn共掺杂的ZnO薄膜沉积到玻璃基板上。步长为2 at。%。研究了锰掺杂对结构,电,光,光致发光,磁性和表面形态性能的影响。研究了对金黄色葡萄球菌的抗菌活性。结构研究表明,所有膜均沿(002)平面生长,与掺杂浓度无关。随着掺杂水平的提高,微晶尺寸减小。 Mn为8 at。%时,电阻率最小(5.49×10〜(-3)Ωcm)。所有薄膜在可见光区域均表现出良好的透明度(85%)。发现膜的光学带隙在3.27-3.41eV的范围内。

著录项

  • 来源
    《Journal of materials science》 |2015年第7期|5451-5458|共8页
  • 作者单位

    Post and Research Department of Physics, AVVM Sri Pushpam College (Autonomous), Poondi, Thanjavur 613 503, Tamil Nadu, India;

    Post and Research Department of Physics, AVVM Sri Pushpam College (Autonomous), Poondi, Thanjavur 613 503, Tamil Nadu, India;

    Post and Research Department of Physics, AVVM Sri Pushpam College (Autonomous), Poondi, Thanjavur 613 503, Tamil Nadu, India;

    Post and Research Department of Physics, AVVM Sri Pushpam College (Autonomous), Poondi, Thanjavur 613 503, Tamil Nadu, India;

    Post and Research Department of Physics, AVVM Sri Pushpam College (Autonomous), Poondi, Thanjavur 613 503, Tamil Nadu, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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