机译:通过使用商业化的显影剂进行表面粗糙处理,可改善10 W运作的垂直LED的光输出
LED Device Research Center, Korea Photonics Technology Institute, Gwangju 500-779, Republic of Korea;
LED Device Research Center, Korea Photonics Technology Institute, Gwangju 500-779, Republic of Korea;
LED Device Research Center, Korea Photonics Technology Institute, Gwangju 500-779, Republic of Korea;
LED Device Research Center, Korea Photonics Technology Institute, Gwangju 500-779, Republic of Korea;
Department of Applied Chemical Engineering, Chonnam National University, Gwangju 500-757, Republic of Korea;
LED Device Research Center, Korea Photonics Technology Institute, Gwangju 500-779, Republic of Korea,Department of Electronic Engineering, Yeungnam University, 280 Daehak-ro, Gyeongsan-si, Gyeongsangbuk-do 712-749, Republic of Korea;
Department of Electronic Engineering, Yeungnam University, 280 Daehak-ro, Gyeongsan-si, Gyeongsangbuk-do 712-749, Republic of Korea;
机译:通过折射率匹配的Si_3N_4 / GaN纳米线阵列使表面粗糙的垂直GaN基LED的增强的光输出
机译:SiO2纳米管阵列使表面粗糙的垂直GaN基LED的光输出增强
机译:具有TiO_2 / SiO_2反射镜和粗糙的GaO_x表面膜的垂直结构的GaN基发光二极管的增强的光输出
机译:自组装银纳米粒子和SiN
机译:在一系列成角度的撞击射流下,光滑和粗糙表面上的局部传热分布。
机译:新型薄GaN LED结构采用微磨光表面可与传统垂直LED在紫外光下进行比较
机译:通过使用商业化的显影剂进行表面粗糙处理,可改善10 W操作的垂直LED的光输出
机译:水平飞行中冰粗糙表面铸件的凸热传递