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Effects of Sb oxidation state on the densification and electrical properties of antimony-doped tin oxide ceramics

机译:锑的氧化态对掺锑氧化锡陶瓷致密化和电学性能的影响

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摘要

For antimony-doped tin oxide (ATO), Sb content and oxidation state remarkably influence the densification, microstructure and electrical properties of ATO ceramics. In this work, ATO powders doped with Sb(Ⅲ) or Sb(Ⅴ) are prepared via chemical precipitation method and are then consolidated by spark plasma sintering (SPS). Results demonstrate that ATO ceramics with a small content of nanoscaled antimony oxides, either Sb(Ⅲ) or Sb(Ⅴ), can be densified through the rapid SPS process. The relative density of 1.5 mol% Sb-doped samples is greater than 96.5 %. However, increased Sb doping concentration, especially for Sb(Ⅴ), restrains both the densification and grain growth in SPS-consolidated ATO. In contrast, Sb(Ⅴ)-doped material exhibits improved electrical conductivity. The resistivity of 1.5 mol% Sb(Ⅴ)-doped sample is only 0.01699 Ω cm, far lower than that of the 1.5 mol% Sb(Ⅲ)-doped sample (0.1338 Ω cm). XPS results indicate a higher Sb~(5+)/Sb~(3+) ratio in Sb(Ⅴ)-doped ATO powder and ceramic than in Sb(Ⅲ)-doped samples. The higher Sb~(5+)/Sb~(3+) ratio contributes to the increase of carrier concentration and the decrease of resistivity of ATO ceramics.
机译:对于掺杂锑的氧化锡(ATO),Sb含量和氧化态会显着影响ATO陶瓷的致密化,微观结构和电性能。本文采用化学沉淀法制备了掺杂有Sb(Ⅲ)或Sb(Ⅴ)的ATO粉末,然后通过火花等离子体烧结(SPS)进行固结。结果表明,可以通过快速的SPS工艺使具有少量纳米级锑氧化物Sb(Ⅲ)或Sb(Ⅴ)的ATO陶瓷致密化。 1.5 mol%的掺Sb样品的相对密度大于96.5%。但是,增加的Sb掺杂浓度,特别是对于Sb(Ⅴ),会抑制SPS固结ATO中的致密化和晶粒长大。相反,掺杂Sb(Ⅴ)的材料表现出改善的电导率。 1.5 mol%Sb(Ⅴ)掺杂样品的电阻率仅为0.01699Ωcm,远低于1.5 mol%Sb(Ⅲ)掺杂样品(0.1338Ωcm)的电阻率。 XPS结果表明,掺杂Sb(Ⅴ)的ATO粉体和陶瓷中的Sb〜(5 +)/ Sb〜(3+)比比掺杂Sb(Ⅲ)的样品更高。较高的Sb〜(5 +)/ Sb〜(3+)比有助于ATO陶瓷的载流子浓度的增加和电阻率的降低。

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  • 来源
    《Journal of materials science 》 |2015年第6期| 4015-4020| 共6页
  • 作者单位

    Department of Chemistry, Wuhan University of Technology, Wuhan 430070, China,Department of Chemical Engineering and Materials Science, University of California, Davis, CA 95616, USA;

    Department of Chemistry, Wuhan University of Technology, Wuhan 430070, China;

    Department of Chemistry, Wuhan University of Technology, Wuhan 430070, China;

    Department of Chemical Engineering and Materials Science, University of California, Davis, CA 95616, USA;

    Department of Chemistry, Wuhan University of Technology, Wuhan 430070, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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