...
首页> 外文期刊>Journal of materials science >Aqueous synthesis of high-fluorescence ZnTe quantum dots
【24h】

Aqueous synthesis of high-fluorescence ZnTe quantum dots

机译:高荧光ZnTe量子点的水合成

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       

摘要

High fluorescence ZnTe quantum dots (QDs) were prepared by one-step aqueous method in faintly acid solution. The detailed microstructure and morphology of the prepared ZnTe QDs has been characterized by X-ray powder diffraction and high resolution transmission electron microscopy, respectively. The average size of as-prepared ZnTe QDs is about 5 nm, which is hexagonal wurtzite structure. The PL spectra consists of a strong peak around 550 nm originating from surface state emission and a weak peak around 470 nm via band edge emission. Meanwhile, ZnTe/ZnSe QDs were prepared by passivating ZnSe shell on surface of ZnTe core, which effectively prevent the Tellurium ion oxidation to reduce the zinc carrier trap and the emission peak at about 470 nm has been strengthened. ZnTe/ZnSe QDs show a higher quantum yield (21.90 %) than ZnTe QDs (10.19 %). Moreover, ZnTe/ZnSe QDs exhibit excellent stability against time.
机译:在微弱酸溶液中通过一步水法制备高荧光的ZnTe量子点(QDs)。分别通过X射线粉末衍射和高分辨率透射电子显微镜表征了制备的ZnTe量子点的详细微观结构和形貌。所制备的ZnTe QD的平均尺寸约为5 nm,为六方纤锌矿结构。 PL光谱由源自表面态发射的550 nm附近的强峰和通过带边发射的470 nm附近的弱峰组成。同时,通过钝化ZnTe核表面的ZnSe壳层制备ZnTe / ZnSe量子点,有效地防止了碲离子的氧化,减少了锌的载流子陷阱,并增强了约470nm的发射峰。 ZnTe / ZnSe QDs的量子产率(21.90%)高于ZnTe QDs(10.19%)。此外,ZnTe / ZnSe QD表现出出色的时间稳定性。

著录项

  • 来源
    《Journal of materials science》 |2015年第6期|4062-4068|共7页
  • 作者单位

    Department of Electron Information Materials, School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China;

    Department of Electron Information Materials, School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China;

    Department of Electron Information Materials, School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China;

    Department of Electron Information Materials, School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China;

    Department of Electron Information Materials, School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China;

    Department of Electron Information Materials, School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号