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Solvothermal synthesis of ZnO nanoparticles at low temperatures as cathode buffer layers for polymer solar cells with an inverted device structure

机译:低温溶剂热合成ZnO纳米粒子作为具有倒置器件结构的聚合物太阳能电池的阴极缓冲层

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摘要

Inverted polymer solar cells of the conventional poly(3-hexylthiophene) (P3HT):(6,6)-phenyl-C61butyric acid methyl ester (PC_(61)BM) blend on indium tin oxide substrates were fabricated. By using mixed-solvent dispersed ZnO nanoparticles (NPs) as cathode buffer layer, device performances are improved obviously. ZnO NPs with a size of 3-5 nm synthesized by solvothermal synthesis at 65 : show relatively wide photoluminescence peak of 300-650 nm. Based on Hansen solubility parameter theory, a mathematical method was applied to calculate the Hansen solubility parameters of bi-solvent system to disperse ZnO NPs and the proportion of each component in the mixed solvent. This excellent dispersion for ZnO NPs in the bi-solvent system has a important influence on the performance of the device. Compared to other methods of ZnO nanofilm fabrication, this method reveals a simple, convenient, moderate and effective way to manufacture the favorable buffer layer in organic solar cells.
机译:在铟锡氧化物基底上制备了常规聚(3-己基噻吩)(P3HT):( 6,6)-苯基-C61丁酸甲酯(PC_(61)BM)共混物的倒置聚合物太阳能电池。通过将混合溶剂分散的ZnO纳米颗粒(NPs)用作阴极缓冲层,可以显着提高器件性能。在65℃下通过溶剂热合成合成的具有3-5nm尺寸的ZnO NP显示出相对宽的300-650nm的光致发光峰。基于Hansen溶解度参数理论,采用数学方法计算了双溶剂体系中ZnO NPs的分散度和各组分在混合溶剂中的比例。 ZnO NPs在双溶剂系统中的优异分散性对器件性能产生重要影响。与其他制备ZnO纳米膜的方法相比,该方法揭示了一种简单,方便,适度和有效的方法来制造有机太阳能电池中良好的缓冲层。

著录项

  • 来源
    《Journal of materials science》 |2016年第10期|10650-10657|共8页
  • 作者单位

    School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006,China;

    School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006,China;

    Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China;

    School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006,China;

    School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006,China;

    School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006,China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-17 13:44:54

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