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首页> 外文期刊>Journal of materials science >Efficient P3HT:PCBM bulk heterojunction organic solar cells; effect of post deposition thermal treatment
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Efficient P3HT:PCBM bulk heterojunction organic solar cells; effect of post deposition thermal treatment

机译:高效的P3HT:PCBM大块异质结有机太阳能电池;沉积后热处理的效果

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摘要

Organic solar cells based on P3HT:PCBM bulk heterojunction were prepared and subjected to post annealing at different temperatures (100, 120, 140, 160 and 180 ℃). SEM, AFM as well as optical images have revealed that post deposition heat treatment has induced significant phase segregation between P3HT and PCBM which were found to result in growth of PCBM clusters on the films surface. The P3HT:PCBM absorption spectra were found to be blue shifted by 7 nm in films subjected to heat treatment at 160 ℃ and 180 ℃. XRD data show a single diffraction peak at 26 = 5.33 ± 0.23° for P3HT:PCBM films and was attributed to the edge-on arrangement of the (100) plane. Space charge limited conduction theory was employed to determine the charge carrier mobility; the highest obtained mobility was obtained for devices with active layers heat-treated at 140 ℃. The change in the barrier height was derived from dark I-V. The variation in the metal-semiconductor contact between the Al electrode and P3HT:PCBM active layer were addressed and the barrier height has increased to form hole blocking contact and the ideality factor has decreased implying a decrease in the recombination rate. A direct relation between Fermi level, V_(bi), and V_(oc) was studied. Efficient device performance was ascribed to P3HT:PCBM layers which were subjected to post deposition heat treatment at 140 ℃ with PCE = 5.5 %, FF = 65.6 %, J_(sc) = 12.9 mA cm~(-2) and V_(oc) = 0.65 V.
机译:制备了基于P3HT:PCBM本体异质结的有机太阳能电池,并在不同温度(100、120、140、160和180℃)下进行后退火。 SEM,AFM和光学图像表明,沉积后热处理已引起P3HT和PCBM之间明显的相分离,这导致膜表面上PCBM簇的生长。在160℃和180℃热处理的薄膜中,发现P3HT:PCBM的吸收光谱蓝移了7 nm。 XRD数据显示P3HT:PCBM膜在26 = 5.33±0.23°处有一个衍射峰,并且归因于(100)平面的边沿排列。采用空间电荷限制传导理论确定载流子迁移率。对于在140℃下热处理过的有源层的器件,获得的迁移率最高。势垒高度的变化源自暗IV。解决了Al电极与P3HT:PCBM活性层之间的金属-半导体接触变化,并且势垒高度增加以形成空穴阻挡接触,而理想因子降低,这意味着复合率降低。研究了费米能级,V_(bi)和V_(oc)之间的直接关系。 P3HT:PCBM层的高效器件性能归因于其在140℃下进行了沉积后热处理,其中PCE = 5.5%,FF = 65.6%,J_(sc)= 12.9 mA cm〜(-2)和V_(oc) = 0.65V。

著录项

  • 来源
    《Journal of materials science》 |2016年第7期|7038-7048|共11页
  • 作者单位

    Material and Engineering Research Institute, Sheffield Hallam University, Sheffield, UK;

    Material and Engineering Research Institute, Sheffield Hallam University, Sheffield, UK;

    Material and Engineering Research Institute, Sheffield Hallam University, Sheffield, UK;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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